|This article does not cite any references or sources. (November 2007)|
The term die shrink (sometimes optical shrink or process shrink) refers to a simple semiconductor scaling of semiconductor devices, mainly transistors. The act of shrinking a die is to create a somewhat identical circuitry using a more advanced fabrication process, usually involving an advance of lithographic node. This reduces overall costs of a chip company, as the absence of major architectural changes to the processor lowers research and development costs, while at the same time allowing more processor dies to be manufactured on the same piece of silicon wafer, resulting in less cost per product sold.
Die shrinks are popular among semiconductor companies, such as Intel, AMD (including the former ATI), NVIDIA, and Samsung for enriching their product lines. Examples in the 2000s include the codenamed Cedar Mill Pentium 4 processors (from 90 nm CMOS to 65 nm CMOS) and Penryn Core 2 processors (from 65 nm CMOS to 45 nm CMOS), the codenamed Brisbane Athlon 64 X2 processors (from 90 nm SOI to 65 nm SOI), and various generations of GPUs from both ATI and NVIDIA. In January 2010, Intel released Clarkdale Core i5 and Core i7 processors fabricated with a 32 nm process, down from a previous 45 nm process used in older iterations of the Nehalem processor microarchitecture.
Die shrinks are beneficial to end-users as shrinking a die reduces the current used by each transistor switching on or off in semiconductor devices while maintaining the same clock frequency of a chip, making a product with less power consumption (and thus less heat production), increased clock rate headroom, and lower prices.
In CPU fabrications, a die shrink always involves an advance to a lithographic node as defined by ITRS (see list at right). For GPU and SoC manufacturing, the die shrink usually often involves shrinking the die on a node not defined by the ITRS, for instance the 150 nm, 110 nm, 80 nm, 55 nm, 40 nm and more currently 28 nm nodes (an expected subsequent half-node is 20 nm), sometimes referred to as "half-node". This is a stopgap between two ITRS-defined lithographic nodes (thus called a "half-node shrink") before further shrink to the lower ITRS-defined nodes occurs, which helps save further R&D cost. The choice to perform die shrinks to either full-nodes or half-nodes rests with the foundry and not the integrated circuit designer.
|Main ITRS node||Stopgap half-node|
|250 nm||220 nm|
|180 nm||150 nm|
|130 nm||110 nm|
|90 nm||80 nm|
|65 nm||55 nm|
|45 nm||40 nm|
|32 nm||28 nm|
|22 nm||20 nm|
|14 nm||16 nm|
|10 nm||11 nm|
- 0.11 µm Standard Cell ASIC
- EETimes: ON Semi offers 110-nm ASIC platform
- Renesas 55 nm process features
- RDA, SMIC make 55-nm mixed-signal IC
- Globalfoundries 40nm
- UMC 45/40nm
- SiliconBlue tips FPGA move to 40-nm
- Globalfoundries 28nm, Leading-Edge Technologies
- TSMC Reiterates 28 nm Readiness by Q4 2011
- Design starts triple for TSMC at 28-nm