Aluminium gallium indium phosphide

From Wikipedia, the free encyclopedia
  (Redirected from AlGaInP)
Jump to: navigation, search

Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material.

AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.

AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.

Safety and toxicity aspects[edit]

The toxicology of AlInGaP has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium gallium phosphide sources (such as trimethylgallium, trimethylindium and phosphine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.[1]

See also[edit]

References[edit]

  1. ^ Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); doi:10.1016/j.jcrysgro.2004.09.007
Notes
  • Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030–1034 (2000) doi:10.1088/0268-1242/15/11/303
  • High Brightness Light Emitting Diodes:G. B. Stringfellow and M. George Craford, Semiconductors and Semimetals, vol. 48, pp. 97–226.