Aluminium arsenide
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| Aluminium arsenide | |
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| Identifiers | |
| CAS number | 22831-42-1  |
| PubChem | 89859 |
| ChemSpider | 81112 |
| Jmol-3D images | Image 1 |
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| Properties | |
| Molecular formula | AlAs |
| Molar mass | 101.9031 g/mol |
| Appearance | orange crystals |
| Density | 3.72 g/cm3 |
| Melting point |
1740 °C (2013 K) |
| Band gap | 2.12 eV (indirect)[1] |
| Electron mobility | 200 cm2/(V·s) (300 K) |
| Thermal conductivity | 0.9 W/(cm·K) (300 K) |
| Refractive index (nD) | 3 (infrared) |
| Structure | |
| Crystal structure | Zinc Blende |
| Space group | T2d-F-43m |
| Coordination geometry |
Tetrahedral |
| Related compounds | |
| Related semiconductor materials | Aluminium gallium arsenide, Aluminium indium arsenide, Aluminium antimonide, Boron arsenide |
 (verify) (what is:  / ?)Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) |
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| Infobox references | |
Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
[edit] Properties[2]
- Thermal expansion coefficient 5 µm/(°C*m)
- Debye temperature 417 K
- Microhardness 5.0 GPa (50 g load)
[edit] References
- ^ Ioffe database
- ^ L. I. Berger "Semiconductor materials" CRC Press, 1996 ISBN 0-8493-8912-7, 9780849389122 (available on google books), p. 126
[edit] External links
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