Boron arsenide

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Boron Arsenide
CAS number 12005-69-5 YesY
Molecular formula BAs or B12As2
Molar mass 85.733 g/mol
Density 5.22 g/cm3, solid
Melting point 2,027 °C (3,681 °F; 2,300 K)
Solubility in water Insoluble
Band gap 1.50 eV(BAs); 3.47 eV(B12As2)
EU classification N/A
Related compounds
Other anions Boron nitride
Boron phosphide
Boron antimonide
Other cations Aluminium arsenide
Gallium arsenide
Indium arsenide
Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
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Infobox references

Boron arsenide is a chemical compound of boron and arsenic. It is a cubic (sphalerite) semiconductor in the III-V family with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV.[1] It can be alloyed with gallium arsenide to produce ternary and quaternary semiconductors.[2] Cubic BAs is reported to decompose to the subarsenide B13As2 at temperatures above 920 °C.[3]

Boron arsenide also occurs as subarsenides, including icosahedral boride, B12As2.[4] It belongs to R-3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As-As chains. It is a wide-bandgap semiconductor (3.47 eV) with the extraordinary ability to “self-heal” radiation damage.[citation needed] This form can be grown on substrates such as silicon carbide.[5]


Boron arsenide has been proposed as a material for solar cell fabrication,[2][6] although it is not currently used for this purpose.

B12As2 may be an attractive choice for devices exposed to radiation[citation needed] which degrades the electrical properties of conventional semiconductors, such as betavoltaic cells, which electrical energy by coupling a radioactive beta emitter to a semiconductor junction, and other space electronics.

A team at Naval Research Laboratory and Boston College found the calculated thermal conductivity of cubic boron arsenide is remarkably high. At room temperature, it is expected to exhibit heat conductivity, κ, of over 2000 W/(m·K), which is comparable to diamond and graphite, and may exceed that of diamond at higher temperatures, according to researchers L. Lindsay, D.A. Broido and T.L. Reinecke.[7][8]


  1. ^ Hart, G. L. W.; Zunger, A. (2000). "Electronic Structure of BAs and Boride III-V Alloys". Physical Review B 62 (20): 13522–13537. arXiv:cond-mat/0009063. doi:10.1103/PhysRevB.62.13522. 
  2. ^ a b J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, R. C. Reedy, A. B. Swartzlander, B. M. Keyes, and A. G. Norman, "BGaInAs alloys lattice matched to GaAs," Applied Phys. Lett. 76, No. 11, 13 Mar. 2000.
  3. ^ T. L. Chu and A. E. Hyslop, J. Electrochem. Soc., Vol. 121, 412 (1974).
  4. ^ "Semiconductor Research". University Bristol, Applied Spectroscopy Group. 
  5. ^ Chen, H.; Wang, G.; Dudley, M.; Xu, Z.; Edgar, J. H.; Batten, T.; Kuball, M.; Zhang, L.; Zhu, Y. (2008). "Single-Crystalline B12As2 on m-plane (1-100)15R-SiC". Applied Physics Letters 92 (23): 231917. doi:10.1063/1.2945635. 
  6. ^ Boone, J. L. and Vandoren, T. P., Boron arsenide thin film solar cell development, Final Report, Eagle-Picher Industries, Inc., Miami, OK. abstract (retrieved May 15, 2014)
  7. ^ news, An unlikely competitor for diamond as the best thermal conductor, Jul 08, 2013 (retrieved May 15, 2014)
  8. ^ First-principles determination of ultrahigh thermal conductivity of boron arsenide: A competitor for diamond?

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