|Molecular formula||BAs or B12As2|
|Molar mass||85.733 g/mol|
|Density||5.22 g/cm3, solid|
|Melting point||2,027 °C (3,681 °F; 2,300 K)|
|Solubility in water||Insoluble|
|Band gap||1.50 eV(BAs); 3.47 eV(B12As2)|
|Other anions||Boron nitride
|Other cations||Aluminium arsenide
|Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)|
|(what is: / ?)|
Boron arsenide is a chemical compound of boron and arsenic. It is a cubic (sphalerite) semiconductor in the III-V family with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide to produce ternary and quaternary semiconductors. Cubic BAs is reported to decompose to the subarsenide B13As2 at temperatures above 920 °C.
Boron arsenide also occurs as subarsenides, including icosahedral boride, B12As2. It belongs to R-3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As-As chains. It is a wide-bandgap semiconductor (3.47 eV) with the extraordinary ability to “self-heal” radiation damage. This form can be grown on substrates such as silicon carbide.
B12As2 may be an attractive choice for devices exposed to radiation which degrades the electrical properties of conventional semiconductors, such as betavoltaic cells, which electrical energy by coupling a radioactive beta emitter to a semiconductor junction, and other space electronics.
A team at Naval Research Laboratory and Boston College found the calculated thermal conductivity of cubic boron arsenide is remarkably high. At room temperature, it is expected to exhibit heat conductivity, κ, of over 2000 W/(m·K), which is comparable to diamond and graphite, and may exceed that of diamond at higher temperatures, according to researchers L. Lindsay, D.A. Broido and T.L. Reinecke.
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