Boron phosphide
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| Boron phosphide | |
|---|---|
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| Identifiers | |
| CAS number | 20205-91-8  |
| PubChem | 88409 |
| Properties | |
| Molecular formula | BP |
| Molar mass | 41.7855 g/mol |
| Appearance | maroon powder |
| Density | 2.90 g/cm3 |
| Melting point |
1100 °C (decomposes) |
| Band gap | 2.1 eV (indirect, 300 K)[1] |
| Thermal conductivity | 4 W/(cm·K) (300 K) |
| Refractive index (nD) | 3.0 (0.63 µm)[1] |
| Structure | |
| Crystal structure | Zinc blende |
| Space group | F43m |
| Coordination geometry |
Tetrahedral |
 (verify) (what is:  / ?)Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) |
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| Infobox references | |
Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide B12P2) is a chemical compound of boron and phosphorus. It is a semiconductor.[2]
Contents |
[edit] History
Crystals of boron phosphide were synthesized by Henri Moissan as early as in 1891.[3]
[edit] Appearance
Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red [4].
[edit] Chemical properties
BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.[4].
[edit] Physical properties
Some properties of BP are listed below:[4][1]
- lattice constant 0.45383 nm
- coefficient of thermal expansion 3.65×10−6 /°C (400 K)
- heat capacity CP ~ 0.8 J/(g·K) (300 K)
- Debye temperature = 985 K
- Bulk modulus 152 GPa
- relatively high microhardness of 32 GPa (100 g load).
- electron and hole mobilities of a few hundred cm2/(V·s) (up to 500 for holes at 300 K)
[edit] See also
[edit] References
- ^ a b c Otfried Madelung (2004). Semiconductors: data handbook. Birkhäuser. pp. 84–. ISBN 978-3-540-40488-0. http://books.google.com/books?id=v_8sMfNAcA4C&pg=PA84. Retrieved 18 February 2012.
- ^ Popper, P.; Ingles, T. A. (1957). "Boron Phosphide, a III–V Compound of Zinc-Blende Structure". Nature 179: 1075. doi:10.1038/1791075a0.
- ^ Moissan, H. (1891). Comp. Rend. 113: 726.
- ^ a b c Berger, L. I. (1996). Semiconductor Materials. CRC Press. p. 116. ISBN 9780849389122. http://books.google.com/books?id=Ty5Ymlg_Mh0C&lpg=PP1&ots=K4Y9uyUkTt&dq=ISBN%200849389127&pg=PA116.
[edit] Further reading
- King, R. B., ed. (1999). Boron Chemistry at the Millennium. Elsevier Science & Technology. ISBN 0-444-72006-5.
- US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko
- Stone, B.; Hill, D. (1960). "Semiconducting Properties of Cubic Boron Phosphide". Physical Review Letter 4: 282–284. doi:10.1103/PhysRevLett.4.282.
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