Category:Semiconductors

C

• [+] Compound semiconductors (9 P)

D

• [+] Semiconductor device fabrication (10 C, 103 P)
• [+] Semiconductor devices (3 C, 30 P)

I

• [+] International Technology Roadmap for Semiconductors lithography nodes (17 P)

J

• [+] Semiconductor journals (5 P)

L

• [+] Light-emitting diodes (3 C, 15 P, 1 F)

M

• [+] Semiconductor materials (5 C, 77 P)

P

• [+] Semiconductor physicists (25 P)

S

• [+] Semiconductor analysis (24 P)
• [+] Semiconductor companies (7 C, 55 P)

• Semiconductor
• Current injection technique

A

• Acceptor (semiconductors)
• Airgap
• Anderson's rule
• Anomalous photovoltaic effect
• Austriamicrosystems

B

• Band diagram
• Band gap
• Band offset

C

• Cadmium oxide
• Carbon nanofoam
• Carrier lifetime
• Charge carriers in semiconductors
• Compound semiconductor
• Conduction band
• Current crowding

D

• Degenerate semiconductor
• Depletion region
• Die shrink
• Diffusion capacitance
• Direct and indirect band gaps
• Donor (semiconductors)
• Dopant

E

• Electron mobility
• Electronic band structure
• Equivalent oxide thickness
• Etch pit density
• Extrinsic semiconductor

F

• Floating body effect

G

• Gate dielectric

H

• Haynes - Shockley experiment
• Heterojunction

H cont.

• Homojunction
• Hot carriers injection
• Hot electron

I

• Impact ionization
• International Electron Devices Meeting
• International Technology Roadmap for Semiconductors
• Intrinsic semiconductor
• Isobutylgermane
• Isotropic etching

J

• Johnson's Figure of Merit

K

• K·p perturbation theory

L

• Lattice constant
• Low-K
• Luttinger parameter
• Luxtera

M

• Metal gate
• Metal-induced gap states
• Metal-semiconductor junction
• Metalorganics
• Moisture Sensitivity Level
• Multi-site test

N

• Narrow gap semiconductor
• Negative bias temperature instability
• Negative luminescence
• Nemotek Technologie

O

• On-die termination
• Overdrive voltage

P

• P-i-n and n-i-p
• P-n junction isolation
• Photo-Dember
• Photoelectrochemical processes
• Proximity communication
• P–n junction

Q

• QBD (electronics)
• Quantum heterostructure

R

• Random logic
• Reliability (semiconductor)
• Reverse leakage current
• Roll-to-roll processing

S

• SILC (semiconductors)
• Schottky barrier
• Schottky transistor
• Semiconductor carrier mobility
• Semiconductor device
• N-type semiconductor
• P-type semiconductor
• SensorDynamics
• Sheet resistance
• Silicate glass
• Silicon on insulator
• Solid state (electronics)
• Strain engineering
• Strained silicon

T

• Thermal copper pillar bump
• Thin-film transistor
• Transistor channel
• Transmission line measurement
• Trimethylgallium
• Trimethylindium

V

• Valence band
• Velocity overshoot
• Velocity saturation
• Voltage reference

W

• Wide bandgap semiconductors

Z

• ZnO based Diluted Magnetic Semiconductors