Copper indium gallium selenide
| Copper indium gallium selenide | |
|---|---|
 CIGS unit cell. Red = Cu, yellow = Se, blue = In/Ga
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| Identifiers | |
| CAS number | 12018-95-0(CuInSe2) |
| Properties | |
| Molecular formula | CuInxGa(1-x)Se2 |
| Density | ~5.7 g/cm3 |
| Melting point |
1070-990 °C(x=0–1)[1] |
| Band gap | 1.7–1.0 eV (x=0–1)[1] |
| Structure | |
| Crystal structure | tetragonal, Pearson symbol tI16 [1] |
| Space group | I42d |
| Lattice constant | a = 0.56–0.58 nm (x=0–1), c = 1.10–1.15 nm (x=0–1) |
| Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) | |
| Infobox references | |
Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuInxGa(1-x)Se2 where the value of x can vary from 1 (pure copper indium selenide) to 0 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide). It is used as light absorber material for thin-film solar cells.[2]
[edit] Structure
CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure. Upon heating it transforms to the zincblende form and the transition temperature decreases from to 1045 °C for x=0 to 805 °C for x=1.[1]
[edit] See also
[edit] References
- ^ a b c d Tinoco, T.; Rincón, C.; Quintero, M.; Pérez, G. Sánchez (1991). "Phase Diagram and Optical Energy Gaps for CuInyGa1−ySe2 Alloys". Physica Status Solidi (a) 124 (2): 427. doi:10.1002/pssa.2211240206.
- ^ "DOE Solar Energy Technologies Program Peer Review". U.S. department of energy 2009. http://www1.eere.energy.gov/solar/review_meeting/pdfs/prm2009_contreras_cigs.pdf. Retrieved 10 February 2011.
