Diode memory

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Diode memory uses diodes and resistors to implement random-access memory for information storage. The devices have been dubbed “one diode-one resistor” (1D-1R).

Silicon dioxide[edit]

One implementation uses a silicon dioxide chip. The circuits require only two terminals instead of three, as in most memory chips. The approach resists heat and radiation.[1]

The design uses a crossbar (a rectangular grid) architecture. When electricity passes through a layer of silicon oxide, it strips away oxygen molecules and creates a channel of pure metallic-phase silicon less than five nanometers wide.[1]

The diodes eliminate the crosstalk inherent in crossbar structures by keeping the electronic state on a cell from leaking into adjacent cells. They have a high on/off ratio of about 10,000 to 1, over the equivalent of 10 years of use, with low-energy consumption.[1]

References[edit]

  1. ^ a b c Wang, G.; Lauchner, A. C.; Lin, J.; Natelson, D.; Palem, K. V.; Tour, J. M. (2013). "High-Performance and Low-Power Rewritable SiOx1 kbit One Diode-One Resistor Crossbar Memory Array". Advanced Materials: n/a. doi:10.1002/adma.201302047.  edit