Gérald Bastard

From Wikipedia, the free encyclopedia
Jump to: navigation, search

Gérald Bastard (born 3 April 1950 in Paris[1]) is a highly cited[2] French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris.

In 2000, Bastard and Emilio E. Mendez won the International Symposium on Compound Semiconductors Quantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)".[3]

Books[edit]

References[edit]

  1. ^ Bastard, Gerald at ISIHighlyCited.com. Accessed 2011-01-26[dead link]
  2. ^ "B - Research Analytics - Thomson Reuters". ISI Highly Cited. Retrieved 28 February 2014. 
  3. ^ "Awards: phys. Stat. Sol. (c) 7/10". Physica Status Solidi (c) 7 (10): 2353–2357. 2010. Bibcode:2010PSSCR...7.2353.. doi:10.1002/pssc.201090015.  edit

External links[edit]