Hafnium(IV) silicate

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Hafnium(IV) silicate
Identifiers
PubChem 17979268
ChemSpider 16470992 YesY
Jmol-3D images Image 1
Properties
Molecular formula HfO4Si
Molar mass 270.57 g mol−1
Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
Infobox references

Hafnium silicate is the hafnium(IV) salt of silicic acid with the chemical formula of HfSiO4.

Thin films of hafnium silicate and zirconium silicate grown by atomic layer deposition, chemical vapor deposition or MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in modern semiconductor devices. The addition of silicon to hafnium oxide increases the band gap, while decreasing the dielectric constant. Furthermore, the addition of silicon to hafnium oxide increases the crystallization temperature of amorphous films and further increases the material's thermal stability with Si at high temperatures.[1] Nitrogen is sometimes added to hafnium silicate for improving the thermal stability and electrical properties of devices.

References[edit]

  1. ^ J.H. Choi et al. (2011). "Development of hafnium based high-k materials—A review". Materials Science and Engineering: R 72 (6): 97–136. doi:10.1016/j.mser.2010.12.001.