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|Jmol-3D images||Image 1|
|Molar mass||270.57 g mol−1|
|Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)|
Thin films of hafnium silicate and zirconium silicate produced by chemical vapor deposition, most often MOCVD, can be used as a high-k dielectric as a replacement for silicon dioxide in semiconductors.
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