IM Flash Technologies

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IM Flash Technologies
Type Non-Public
Industry Semiconductor integrated circuitry
Founded 2006
Headquarters 4000 North Flash Drive
Lehi, Utah
USA
Key people Jason Dunn and Keyvan Esfarjani
Employees 1,500 - 2,000
Website IMFLASH.com

IM Flash Technologies, LLC is the semiconductor company founded in January 2006, by Intel Corporation and Micron Technology, Inc.

IM Flash produces NAND flash memory for use in consumer electronics, removable storage and handheld communication devices.

It has a 300mm wafer fab in Lehi, UT, United States, and built a second 300mm wafer fab, IM Flash Singapore in Singapore, which opened in April 2011.[1]

IM Flash took the leading edge in NAND flash scaling by moving to 34 nm design rules in 2008.[2] IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology.[3] In 2011 IM Flash moved to a 20 nm process–the smallest NAND flash technology to date.[4]

References[edit]

  1. ^ Intel, Micron Open Singapore NAND Flash Plant
  2. ^ Intel, Micron roll 34-nm NAND device
  3. ^ Intel, Micron take NAND lead, roll 25-nm chip
  4. ^ Intel and Micron announce new 20nm NAND Flash manufacturing process April 14, 2011.

External links[edit]