IM Flash Technologies
Exterior of IM Flash Technologies, Lehi, Utah, USA
|Industry||Semiconductor integrated circuitry|
|Headquarters||4000 North Flash Drive
|Key people||Jason Dunn and Keyvan Esfarjani|
|Employees||1,500 - 2,000|
IM Flash took the leading edge in NAND flash scaling by moving to 34 nm design rules in 2008. IM Flash has been able to devise 25-nm NAND chips with 193-nm immersion lithography, plus self-aligned double-patterning (SADP) techniques, where it is widely believed that it is using scanners from ASML Holdings NV and SADP technology. In 2011 IM Flash moved to a 20 nm process–the smallest NAND flash technology to date.
- Intel, Micron Open Singapore NAND Flash Plant
- Intel, Micron roll 34-nm NAND device
- Intel, Micron take NAND lead, roll 25-nm chip
- Intel and Micron announce new 20nm NAND Flash manufacturing process April 14, 2011.
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