Indium phosphide

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Indium phosphide
InPcrystal.jpg
Boron-phosphide-unit-cell-1963-CM-3D-balls.png
Identifiers
CAS number 22398-80-7 YesY
PubChem 31170
ChemSpider 28914 YesY
Jmol-3D images Image 1
Properties
Molecular formula InP
Molar mass 145.792 g/mol
Appearance black cubic crystals
Density 4.81 g/cm3, solid
Melting point 1,062 °C (1,944 °F; 1,335 K)
Solubility slightly soluble in acids[1]
Band gap 1.344 eV (300 K; direct)
Electron mobility 5400 cm2/(V·s) (300 K)
Thermal conductivity 0.68 W/(cm·K) (300 K)
Refractive index (nD) 3.1 (infrared);
3.55 (632.8 nm)[2]
Structure
Crystal structure Zinc blende
Coordination
geometry
Tetrahedral
Thermochemistry
Specific
heat capacity
C
45.4 J/(mol·K)[3]
Std molar
entropy
So298
59.8 J/(mol·K)
Std enthalpy of
formation
ΔfHo298
-88.7 kJ/mol
Hazards
MSDS External MSDS
EU Index Not listed
Main hazards Toxic, hydrolysis to phosphine
Related compounds
Other anions Indium nitride
Indium arsenide
Indium antimonide
Other cations Aluminium phosphide
Gallium phosphide
Related compounds Indium gallium phosphide
Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide
Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
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Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Manufacturing[edit]

Indium phosphide is prepared from the reaction of white phosphorus and indium iodide at 400 °C. [4]

Uses[edit]

InP is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Chemistry[edit]

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.[5]

References[edit]

  1. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2 
  2. ^ Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry, Journal of Materials Science Letters 12 (10): 721, doi:10.1007/BF00626698. 
  3. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0-8493-0594-2 
  4. ^ Indium Phosphide at HSDB
  5. ^ Bouarissa, Nadir (July 2011). "Phonons and related crystal properties in indium phosphide under pressure". Physica B: Condensed Matter 406 (13): 2583–2587. doi:10.1016/j.physb.2011.03.073. Retrieved 22 March 2013. 

External links[edit]