Indium gallium zinc oxide
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Indium gallium zinc oxide, IGZO is a semiconducting material, jointly developed by Sharp Corporation and Semiconductor Energy Laboratories, which can be used as the channel for a transparent thin-film transistor. It replaces amorphous silicon for the active layer of an LCD screen, and, with a forty times higher electron mobility than amorphous silicon, it allows either smaller pixels (for screen resolutions higher than HDTV) or much higher reaction speed for a screen. [1]
Its advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors.[2] The transistors are slightly photo-sensitive, but the effect becomes significant only in the deep violet to ultra-violet (photon energy above 3 eV), offering the possibility of a fully transparent transistor.
Sharp announced in mid-April 2012 [3] that they were producing bulk volumes of 32-inch 3840×2160, 10-inch 2560×1600 and 7-inch 1280x800 IGZO panels.
On October 26 2012, AU Optronics announced a 65-inch 4k UHDTV IGZO display.[4]
References [edit]
- ^ http://sharp-world.com/corporate/news/120601.html
- ^ "Photosensitivity of amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays".
- ^ http://www.reghardware.com/2012/04/13/sharp_begins_production_of_igzo_retina_display_tech/
- ^ "AUO Reveals 65-inch 4K by 2K IGZO TV Panel Technology".
