Indium gallium zinc oxide
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Indium gallium zinc oxide, IGZO is a semiconducting material, jointly developed by Sharp Corporation and Semiconductor Energy Laboratories, which can be used as the channel for a transparent thin-film transistor. It replaces amorphous silicon for the active layer of an LCD screen, and, with a forty times higher electron mobility than amorphous silicon, it allows either smaller pixels (for screen resolutions higher than HDTV) or much higher reaction speed for a screen. 
Its advantage over zinc oxide is that it can be deposited as a uniform amorphous phase while retaining the high carrier mobility common to oxide semiconductors. The transistors are slightly photo-sensitive, but the effect becomes significant only in the deep violet to ultra-violet (photon energy above 3 eV), offering the possibility of a fully transparent transistor.
- "Photosensitivity of amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays".
- "AUO Reveals 65-inch 4K by 2K IGZO TV Panel Technology".