International Electron Devices Meeting
The IEEE International Electron Devices Meeting (IEDM) is an annual electronics conference held alternately in San Francisco, CA and Washington D.C. each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor device technology, design, manufacturing, physics, modeling and circuit-device interaction. IEDM brings together managers, engineers, and scientists from industry and academia around the world to discuss nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nanoscale devices using emerging phenomena, optoelectronics, power, energy harvesting, and ultra-high-speed devices, as well as process technology and device modeling and simulation. The conference also encompasses discussions and presentations on devices in silicon, compound and organic semiconductors, and emerging material systems. In addition to technical paper presentations, IEDM includes multiple plenary presentations, panel sessions, tutorials, short courses, and invited talks and an entrepreneurship panel session conducted by experts in the field from around the globe.
The 2014 IEDM will take place December 15-17, 2014 at the Hilton San Francisco Union Square Hotel.
The First Annual Technical Meeting on Electron Devices (renamed the International Electron Devices Meeting in the mid-1960s) took place on October 24–25, 1955 at the Shoreham Hotel in Washington D.C. with approximately 700 scientists and engineers in attendance. At that time, the seven-year-old transistor and the electron tube reigned as the predominant electron-device technology. Fifty-four papers were presented on the then state-of-the-art in electron device technology, the majority of them from four U.S. companies -- Bell Telephone Laboratories, RCA Corporation, Hughes Aircraft Co. and Sylvania Electric Products. The need for an electron devices meeting was driven by two factors: commercial opportunities in the fast-growing new "solid-state" branch of electronics, and the U.S. government's desire for solid-state components and better microwave tubes for aerospace and defense.
The 2013 International Electron Devices Meeting took place at the Hilton Washington Hotel from December 9–11, 2013 and focused on:
- Non-planar FinFETs on bulk silicon and fully depleted planar silicon-on-insulator (FD-SOI) devices, as the two mainstream advanced technology approach for continued scaling 
- Non-silicon devices such as tunneling FETs (TFETs), which hold promise as a way to control transistor off-state leakage by getting around the sub-60 mV/decade steep subthreshold slope barrier. 
- 3D integrated circuit for stacking of heterogeneous chips for future system on chip (SOC)
- Various non-volatile memory technologies such as resistive memories (ReRAM or RRAM), which are attracting interest because of their potential to deliver faster write times and greater endurance than flash.
- Biomedical electronics, which are attracting widespread interest because of the potential for low-cost DNA-sequencing on a chip
- Power electronic devices for automotive and smart grid applications
IEDM 2012 Highlights
- technology/circuit co-optimization
- power/performance/area analyses
- design for manufacturing and process control
- CMOS platform technology and scaling
IEDM 2011 Highlights
- circuit & device interaction
- graphene nanoelectronics
- technology CAD for modeling & design of bio-devices
- IGBT & superjunction
IEDM 2010 Highlights
- emphasis on power and energy
- 15 nm CMOS device technology
- novel quantum & nano-scale devices
- mechanical MEMS
- graphene FETs
IEDM 2009 Highlights
The 2009 International Electron Devices Meeting took place from December 7–9, 2009 at the Hilton Baltimore, due to venue renovations at the Washington, D.C. venue. The 2009 meeting focused on the following:
- diverse energy-efficient technologies, such as light-powered retinal implants and solar cells made from inexpensive organic materials
- next generation technology for mainstream computer chips—a fully featured 32-nanometer technology platform from Intel
- nanoscale-sized transistors
- advanced computer memories, including three-dimensional and phase-change memory technologies
- One-atom-thick graphene as a potential new material for the continuing miniaturization of electronic systems
- device/circuit interaction
- melding standard silicon chip technology with GaN (gallium nitride) and other compound semiconductor materials
IEDM 2008 Highlights
The 2008 International Electron Devices Meeting took place in San Francisco, CA from December 15–17, 2008. Major highlights included:
- special session on micro- and nanoelectronic technologies for life sciences
- device/circuit interactions as independent electronic systems
- building three-dimensional integrated circuits
- advanced computer memories
- batteries made from nanowires for next-generation electronic systems, with 10x more storage capacity
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- IEDM on Facebook
- IEDM on Twitter: @ieee_iedm
- Electron Device Society of the IEEE
- IEEE Xplore Digital Library