James M. Early
|James M. Early|
July 25, 1922|
Syracuse, New York
|Died||January 12, 2004
VA Palo Alto Health Care System
Palo Alto, California
He was born on July 25, 1922 in Syracuse, New York.
The Early effect in bipolar junction transistors is named after Jim Early, who first characterized it and published a paper on it in 1952. The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the collector current with an increase in the collector voltage. The same type of length modulation in MOSFETs is also commonly referred to as Early effect.
- J.M. Early, "Effects of space-charge layer widening in junction transistors", Proc. IRE, vol. 40, pp. 1401-1406 (1952).
- Early, James M. (1990). "Telstar I - Dawn of a New Age". Southwest Museum of Engineering, Communications and Computation. Retrieved 11 July 2012.
- "Pioneering engineer and inventor James Early dies". Associated Press. January 13, 2004. Retrieved 2012-09-25. "James M. Early, an electrical engineer and inventor best known for his pioneering work with transistors, has died. He was 81. Early died Monday at a veteran's hospital in Palo Alto."
- Memorial page at Southwest Museum of Engineering, Communications and Computation
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