Johnson's figure of merit

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Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by A. Johnson of RCA in 1965.[1] Note that this figure of merit (FoM) is applicable to both field-effect transistors (FETs), and with proper interpretation of the parameters, also to bipolar junction transistors (BJTs).

References[edit]

  1. ^ "Physical limitations on frequency and power parameters of transistors", RCA Review, vol. 26, pp163-177, 1965.