Leakage (semiconductors)
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It has been suggested that this article or section be merged with Leakage (electronics). (Discuss) Proposed since October 2009. |
In semiconductor devices, leakage is a quantum[clarification needed] phenomenon where mobile charge carriers (electrons or holes) tunnel through an insulating region. Leakage increases exponentially as the thickness of the insulating region decreases. Tunneling leakage can also occur across semiconductor junctions between heavily doped P-type and N-type semiconductors. Other than tunneling via the gate insulator or junctions, carriers can also leak between source and drain terminals of a Metal Oxide Semiconductor (MOS) transistor. This is called subthreshold conduction. The primary source of leakage occurs inside transistors, but electrons can also leak between interconnects. Leakage increases power consumption and if sufficiently large can cause complete circuit failure.
Leakage is currently one of the main factors limiting increased computer processor performance. Efforts to minimize leakage include the use of strained silicon, high-k dielectrics, and/or stronger dopant levels in the semiconductor. Leakage reduction to continue Moore's law will not only require new material solutions but also proper system design.
Certain types of semiconductor manufacturing defects exhibit themselves as increased leakage. Thus measuring leakage, or Iddq testing, is a quick, inexpensive method finding defective chips.
Increased leakage is a common failure mode resulting from non-catastrophic overstress of a semiconductor device, when the junction or the gate oxide suffers permanent damage not sufficient to cause a catastrophic failure. Overstressing the gate oxide can lead to stress-induced leakage current.
In bipolar junction transistors, the emitter current is sum of the collector and base currents. Ie = Ic + Ib. The collector current has two components, minority carriers and majority carriers. The minority current is called the leakage current[clarification needed].
Leakage current is generally measured in microamperes. For a reverse-biased diode it is temperature sensitive. Leakage current must be carefully examined for applications that work in wide temperature ranges.
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