MEMS sensor generations

From Wikipedia, the free encyclopedia
Jump to: navigation, search

MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows:

1st Generation 
MEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip..[1]
2nd Generation
MEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip.
3rd Generation 
Fusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip.
4th Generation 
Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.

References[edit]

  1. ^ S.C.Terry,J.H.Jerman and J.B.Angell:A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer,IEEE Trans.Electron Devices,ED-26,12(1979)1880-1886.