Orders of magnitude (capacitance)

From Wikipedia, the free encyclopedia
Jump to: navigation, search

This page lists examples of capacitance. Grouped by orders of magnitude.

List of orders of magnitude for capacitance
Factor (Capacitance) SI prefix Value Item
10−15 fF 2×10−15 F gate capacitance of a MOS transistor, per µm of gate width.[1]
10−14 3×10−14 F DRAM cell.[2]
10−13 1×10−13 F small ceramic capacitor.[3]
10−12 pF 1×10−12 F small mica and PTFE capacitor.[3]
5×10−12 F low condenser microphone.[4]
4×10−12 F capacitive sensing of air-water-snow-ice.[5]
10−11 4.5×10−11 F variable capacitor[6]
4.9×10−11 F yoga mat of TPE[7] with relative permittivity of 4.5[8] and 8 mm thick sandwiched between two 1 dm² electrodes.
5×10−11 F 1 m of Cat 5 network cable (between the two conductors of a twisted pair)
10−10 1×10−10 F capacitance of the standard human body model.
1×10−10 F 1 m of 50 Ω coaxial cable (between the inner and outer conductors)
1.00×10−10 F high condenser microphone.[4]
3.30×10−10 F variable capacitor[6]
10−9 nF 1×10−9 F typical leyden jar.[9]
10−7 1×10−7 F small aluminum electrolytic capacitor.[3]
8.2×10−7 F large mica and PTFE capacitor.[3]
10−6 µF
10−4 1×10−4 F large ceramic capacitor.[3]
10−3 mF 6.8×10−3 F small electric double layer supercap.[3]
100 F 1×100 F Earth–ionosphere capacitance.[10]
1.5×100 F large aluminum electrolytic capacitor.[3]
103 kF 5×103 F large electric double layer supercap.[3]

SI multiples[edit]

SI multiples for farad (F)
Submultiples Multiples
Value Symbol Name Value Symbol Name
10−1 F dF decifarad 101 F daF decafarad
10−2 F cF centifarad 102 F hF hectofarad
10−3 F mF millifarad 103 F kF kilofarad
10−6 F µF microfarad 106 F MF megafarad
10−9 F nF nanofarad 109 F GF gigafarad
10−12 F pF picofarad 1012 F TF terafarad
10−15 F fF femtofarad 1015 F PF petafarad
10−18 F aF attofarad 1018 F EF exafarad
10−21 F zF zeptofarad 1021 F ZF zettafarad
10−24 F yF yoctofarad 1024 F YF yottafarad

This SI unit is named after Michael Faraday. As with every International System of Units (SI) unit whose name is derived from the proper name of a person, the first letter of its symbol is upper case (F). However, when an SI unit is spelled out in English, it should always begin with a lower case letter (farad), except in a situation where any word in that position would be capitalized, such as at the beginning of a sentence or in capitalized material such as a title. Note that "degree Celsius" conforms to this rule because the "d" is lowercase.— Based on The International System of Units, section 5.2.

See also[edit]


  1. ^ Abraham, J.A. (2011-09-07). "CMOS Transistor Theory". Department of Electrical and Computer Engineering, The University of Texas at Austin. p. 13. Retrieved 2013-10-04. 
  2. ^ Wang, David Tawei (2005). "Modern DRAM Memory Systems: Performance Analysis and a High Performance, Power-Constrained DRAM Scheduling Algorithm". department of Electrical & Computer Engineering, University of Maryland. p. 11. Retrieved 2013-10-07. 
  3. ^ a b c d e f g h digikey.com - Electronic Parts, Components and Suppliers | DigiKey, 2012-06-05
  4. ^ a b wikipedia.org - Microphone#Condenser microphone, 2012-06-04
  5. ^ umanitoba.ca - Capacitive probe for ice detection and accretion rate measurement: proof of concept, 2010, p64
  6. ^ a b wikipedia.org - Variable capacitor, 2012-01-12
  7. ^ treadmillfactory.ca - Deluxe TPE Dual Tone Yoga & Pilates Mat Green -Yoga / Pilates, 2012-06-06
  8. ^ - Dielectric characteristics of static shield for coil-end of gas-insulated transformer, 1992-06-..
  9. ^ wikipedia.org - Leyden jar#Design, 2012-05-19
  10. ^ Price, Colin (2010). "Seminar in Atmospheric Electricity". Department of Geophysics & Planetary Science, Telaviv University. Retrieved 2013-10-04.