Orders of magnitude (capacitance)

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This page lists examples of capacitance. Grouped by orders of magnitude.

List of orders of magnitude for capacitance
Factor (Capacitance) SI prefix Value Item
10−15 fF 2 fF gate capacitance of a MOS transistor, per µm of gate width.[1]
10−14 30 fF DRAM cell.[2]
10−13 100 fF small ceramic capacitor.[3]
150 fF pin to pin capacitance in a SSOP/TSSOP integrated circuit package.[4][5]
10−12 pF 1 pF small mica and PTFE capacitor.[3]
2 pF solderless breadboard, between two adjacent 5-contact columns.[6]
4 pF capacitive sensing of air-water-snow-ice.[7]
5 pF low condenser microphone.[8]
10−11 45 pF variable capacitor[9]
49 pF yoga mat of TPE[10] with relative permittivity of 4.5[11] and 8 mm thick sandwiched between two 1 dm² electrodes.
50 pF 1 m of Cat 5 network cable (between the two conductors of a twisted pair)
10−10 100 pF capacitance of the standard human body model.
1 m of 50 Ω coaxial cable (between the inner and outer conductors)
high condenser microphone.[8]
330 pF variable capacitor[9]
10−9 nF 1 nF typical leyden jar.[12]
10−7 100 nF small aluminum electrolytic capacitor.[3]
820 nF large mica and PTFE capacitor.[3]
10−6 µF
10−4 100 µF large ceramic capacitor.[3]
10−3 mF 6.8 mF small electric double layer supercap.[3]
100 F 1 F Earth–ionosphere capacitance.[13]
1.5 F large aluminum electrolytic capacitor.[3]
103 kF 5 kF large electric double layer supercap.[3]

SI multiples[edit]

SI multiples for farad (F)
Submultiples Multiples
Value Symbol Name Value Symbol Name
10−1 F dF decifarad 101 F daF decafarad
10−2 F cF centifarad 102 F hF hectofarad
10−3 F mF millifarad 103 F kF kilofarad
10−6 F µF microfarad 106 F MF megafarad
10−9 F nF nanofarad 109 F GF gigafarad
10−12 F pF picofarad 1012 F TF terafarad
10−15 F fF femtofarad 1015 F PF petafarad
10−18 F aF attofarad 1018 F EF exafarad
10−21 F zF zeptofarad 1021 F ZF zettafarad
10−24 F yF yoctofarad 1024 F YF yottafarad

This SI unit is named after Michael Faraday. As with every International System of Units (SI) unit whose name is derived from the proper name of a person, the first letter of its symbol is upper case (F). However, when an SI unit is spelled out in English, it should always begin with a lower case letter (farad), except in a situation where any word in that position would be capitalized, such as at the beginning of a sentence or in capitalized material such as a title. Note that “degree Celsius” conforms to this rule because the “d” is lowercase.— Based on The International System of Units, section 5.2.

See also[edit]


  1. ^ Abraham, J.A. (2011-09-07). "CMOS Transistor Theory". Department of Electrical and Computer Engineering, The University of Texas at Austin. p. 13. Retrieved 2013-10-04. 
  2. ^ Wang, David Tawei (2005). "Modern DRAM Memory Systems: Performance Analysis and a High Performance, Power-Constrained DRAM Scheduling Algorithm". department of Electrical & Computer Engineering, University of Maryland. p. 11. Retrieved 2013-10-07. 
  3. ^ a b c d e f g h digikey.com - Electronic Parts, Components and Suppliers | DigiKey, 2012-06-05
  4. ^ Clark, Sean. "IC Package Design’s Effects on Signal Integrity" (PDF). Fairchild Semiconductor. p. 16. Retrieved 21 November 2014. 
  5. ^ "AN-1205 Electrical Performance of Packages" (PDF). Texas Instruments. May 2004. p. 4. Retrieved 21 November 2014. 
  6. ^ Jones, David. "EEVblog #568 - Solderless Breadboard Capacitance". EEVblog. Retrieved 24 November 2014. 
  7. ^ umanitoba.ca - Capacitive probe for ice detection and accretion rate measurement: proof of concept, 2010, p64
  8. ^ a b wikipedia.org - Microphone#Condenser microphone, 2012-06-04
  9. ^ a b wikipedia.org - Variable capacitor, 2012-01-12
  10. ^ treadmillfactory.ca - Deluxe TPE Dual Tone Yoga & Pilates Mat Green -Yoga / Pilates, 2012-06-06
  11. ^ - Dielectric characteristics of static shield for coil-end of gas-insulated transformer, 1992-06-..
  12. ^ wikipedia.org - Leyden jar#Design, 2012-05-19
  13. ^ Price, Colin (2010). "Seminar in Atmospheric Electricity". Department of Geophysics & Planetary Science, Telaviv University. Retrieved 2013-10-04.