PLEDM
From Wikipedia, the free encyclopedia
 |
This article is an orphan, as few or no other articles link to it. Please introduce links to this page from related articles; suggestions may be available. (February 2009) |
PLEDM (Phase-state Low Electron (hole)-number Drive Memory) is a type of memory chip, developed in 1999 at Hitachi's laboratory at the University of Cambridge. PLEDM is based on PLEDTR technology.[1]
[edit] Features
- nonvolatile memory
- read/write time less than 10 nanoseconds
- one transistor for each memory cell
- reduced power consumption[2]
[edit] References
[edit] External links
 |
This computer storage–related article is a stub. You can help Wikipedia by expanding it. |
