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Stress Induced Leakage Current (SILC) is an increase in the gate leakage current of a MOSFET, due to defects created in the gate oxide during electrical stressing. SILC is perhaps the largest factor inhibiting device miniaturization. Increased leakage is a common failure mode of electronic devices.
The most well-studied defects assisting in the leakage current are those produced by charge trapping in the oxide. This model provides a point of attack and has stimulated researchers to develop methods to decrease the rate of charge trapping by mechanisms such as nitrous oxide (N2O) nitridation of the oxide.
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