T-RAM
| Computer memory types |
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| Semiconductor memory |
| Volatile |
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| Non-volatile |
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Thyristor RAM (T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor[1], is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.
It is assumed that this type of memory will be used in the next-generation processors by AMD, produced in 32nm and 22nm [2], replacing the previously licensed but unused Z-RAM technology. Xandores CPCARM is taking effort to develop this technology.
[edit] References
- ^ http://www.t-ram.com/technology/index.html Description of the technology
- ^ http://www.businesswire.com/portal/site/home/permalink/?ndmViewId=news_view&newsId=20090518005181 Business Wire: GlobalFoundries may use T-RAM in AMD next generation processors
[edit] External links
- T-RAM Semiconductor
- T-RAM Description
- EE Times: GlobalFoundries to apply thyristor-RAM at 32-nm node
- Semiconductor International: GlobalFoundries Outlines 22 nm Roadmap
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