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Thyristor RAM (T-RAM) is a new (2009) type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor,[1] is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.

It is assumed that this type of memory will be used in the next-generation processors by AMD, produced in 32 nm and 22 nm,[2] replacing the previously licensed but unused Z-RAM technology.


  1. ^ http://www.t-ram.com/technology/index.html Description of the technology
  2. ^ http://www.businesswire.com/portal/site/home/permalink/?ndmViewId=news_view&newsId=20090518005181 Business Wire: GlobalFoundries may use T-RAM in AMD next generation processors

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