Except where noted otherwise, data is given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
Tungsten(III) oxide (W2O3) is a compound of tungsten and oxygen. It has been reported (2006) as being grown as a thin film by atomic layer deposition at temperatures between 140 and 240 °C using W2(N(CH3)2)6 as a precursor. It is not referred to in major text books. Some older literature refers to the compound W2O3 but as the atomic weight of tungsten was believed at the time to be 92, i.e., approximately half the modern accepted value of 183.84, the compound actually being referred to was WO3.
Tungsten(III) oxide is used in various types of infrared absorbing coatings and foils.
- Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W2(NMe2)6 and Water: Precursor-Based Control of Oxidation State in the Thin Film Material Charles L. Dezelah IV, Oussama M. El-Kadri, Imre M. Szilagyi, Joseph M. Campbell, Kai Arstila, Lauri Niinistö, Charles H. Winter, J. Am. Chem. Soc., 128 (30), 9638 -9639, (2006)doi:10.1021/ja063272w
- Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 0080379419.
- Wells, A. F. (1984), Structural Inorganic Chemistry (5th ed.), Oxford: Clarendon Press, ISBN 0-19-855370-6
- F. T Conington (1858), A handbook of chemical analysis, based on Dr. H. Will's Anleitung zur chemischen analyse, Longman, Brown, Green, Longmans, and Roberts
- Willey, R.R. (2002), Practical Design and Production of Optical Thin Films. Available from: http://www.crcnetbase.com/isbn/9780203910467 CRC Press. Section:18.104.22.168 ISBN 978-0-203-91046-7 Accessed: 17-07-2014
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