William S. Hobson

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William S. Hobson is a chemistry teacher.

William Hobson
Citizenship United States
Nationality American
Fields Chemistry
Institutions Bell Labs, Multiplex Inc.
Alma mater College of the Holy Cross

Education[edit]

Hobson attended College of the Holy Cross and received his B.A. in 1980. Hobson went on to receive his Ph.D. from University of Wisconsin-Madison and graduated in 1984.

Career[edit]

Work At Bell Labs[edit]

After graduating from the University of Wisconsin-Madison, Hobson was recruited by Bell Labs in Murray Hill, New Jersey and began work in 1984. At Bell Labs Hobson worked on such advances as MOCVD technology, as well as III-V processing and III-V device technologies including VCSELs, HBTs, and high powered lasers. While working at Bell Labs Hobson published many papers and earned many patents. One of Hobson's most important achievements was the pioneering of GaAs MOSFETs, a problem that had eluded scientists for 30 years. Hobson's final position in Bell Labs was as a member of the technical staff and principal investigator

Work At Multiplex Inc[edit]

Hobson left Bell Labs in 2001 and joined Multiplex. Hobson became Senior Director of Technology and Manufacturing Laser Components soon after joining. Hobson continued to develop Laser and Transistor Technology until he left Multiplex.

Teaching at Newark Academy[edit]

In 2008, Hobson began teaching chemistry at Newark Academy, a small private school in Livingston, NJ.

References[edit]

External links[edit]