5 nm process: Difference between revisions

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The 5 nanometer (5 nm) node is the technology node following the 7 nm node. Although Intel has not yet divulged any certain plans to manufacturers or retailers, their 2009 roadmap projects an end-user release by approximately 2020.^[1]^[2] According to Bob Colwell, 5 nm will be the end of Moore's law.^[3]

Technology demos

In 2006, a team of Korean researchers from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center codeveloped a 3 nm transistor, the world's smallest nanoelectronic device based on conventional technology, called a fin field-effect transistor (FinFET).^[4]^[5] It is the smallest transistor ever produced.

In 2010, an Australian team announced that they fabricated a single functional transistor out of 7 atoms that measured 4 nm in length.^[6]^[7]^[8]

In 2012 a single atom transistor was fabricated using a phosphorus atom bound to a silicon surface (between two significantly larger electrodes). This transistor could be said to be a 180 pm transistor (the Van der Waals radius of a phosphorus atom); though its covalent radius bound to silicon is likely smaller.^[9] Making transistors smaller than this will require either using elements with smaller atomic radii, or using subatomic particles—like electrons or protons—as functional transistors.

Successors

Continuing the pattern of halving the surface area of each node (or reducing the square sides by 1.4) every two years, it can be expected that 4 nm technology will appear in roughly 2022, 3 nm in 2024, 2 nm in 2026, and lastly 1 nm in 2028, which may be the limit for current lithographic semiconductor silicon technology as presently implemented.^[10] As a result 2030 and beyond may see a shift in technology to enable smaller components in the form of silicene or silicon nanotubes.

In 2008, transistors one atom thick and ten atoms wide were made by UK researchers. They were carved from graphene, predicted by some to one day oust silicon as the basis of future computing. Graphene is a material made from flat sheets of carbon in a honeycomb arrangement, and is a leading contender. A team at the University of Manchester, UK, used it to make some of the smallest transistors ever: devices only 1 nm across that contain just a few carbon rings.^[11]

References

^ "Intel Outlines Process Technology Roadmap". Xbit. 2009-08-22.
^ "インテル、32nmプロセスの順調な立ち上がりをアピール" (in Japanese). PC Watch. 2009-08-21. {{cite web}}: Unknown parameter |trans_title= ignored (|trans-title= suggested) (help)
^ "End of Moore's Law: It's not just about physics". CNET. August 28, 2013.
^ Still Room at the Bottom.(nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )
^ Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". Symposium on VLSI Technology, 2006: 58–59. doi:10.1109/VLSIT.2006.1705215. {{cite journal}}: Explicit use of et al. in: |last2= (help)
^ Fuechsle, Martin; et al. (2010). "Spectroscopy of few-electron single-crystal silicon quantum dots". Nature Nanotechnology. 5 (7): 502–505. doi:10.1038/nnano.2010.95. {{cite journal}}: Explicit use of et al. in: |last2= (help)
^ Ng, Jansen (May 24, 2010). "Researchers Create Seven Atom Transistor, Working on Quantum Computer". Daily Tech.
^ Beale, Bob (May 24, 2010). "Quantum leap: World's smallest transistor built with just 7 atoms". Phys.Org.
^ "Team designs world's smallest transistor". Retrieved 28 May 2013. {{cite web}}: Unknown parameter |deadurl= ignored (|url-status= suggested) (help)
^ Samsung's Kim Claims No Limit to Scaling
^ Atom-thick material runs rings around silicon

Preceded by 7 nm	CMOS manufacturing processes	Succeeded by Nanotechnology

[1] "Intel Outlines Process Technology Roadmap". Xbit. 2009-08-22.

[2] "インテル、32nmプロセスの順調な立ち上がりをアピール" (in Japanese). PC Watch. 2009-08-21. {{cite web}}: Unknown parameter |trans_title= ignored (|trans-title= suggested) (help)

[3] "End of Moore's Law: It's not just about physics". CNET. August 28, 2013.

[4] Still Room at the Bottom.(nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )

[5] Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". Symposium on VLSI Technology, 2006: 58–59. doi:10.1109/VLSIT.2006.1705215. {{cite journal}}: Explicit use of et al. in: |last2= (help)

[6] Fuechsle, Martin; et al. (2010). "Spectroscopy of few-electron single-crystal silicon quantum dots". Nature Nanotechnology. 5 (7): 502–505. doi:10.1038/nnano.2010.95. {{cite journal}}: Explicit use of et al. in: |last2= (help)

[7] Ng, Jansen (May 24, 2010). "Researchers Create Seven Atom Transistor, Working on Quantum Computer". Daily Tech.

[8] Beale, Bob (May 24, 2010). "Quantum leap: World's smallest transistor built with just 7 atoms". Phys.Org.

[9] "Team designs world's smallest transistor". Retrieved 28 May 2013. {{cite web}}: Unknown parameter |deadurl= ignored (|url-status= suggested) (help)

[10] Samsung's Kim Claims No Limit to Scaling

[11] Atom-thick material runs rings around silicon

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@@ Line 31: / Line 31: @@
 Continuing the pattern of halving the surface area of each node (or reducing the square sides by 1.4) every two years, it can be expected that 4&nbsp;nm technology will appear in roughly 2022, 3&nbsp;nm in 2024, 2&nbsp;nm in 2026, and lastly 1&nbsp;nm in 2028, which may be the limit for current lithographic semiconductor silicon technology as presently implemented.<ref>[http://maltiel-consulting.com/Samsung-5nm_No_Limit_to_Silicon_Scaling_maltiel_semiconductor.html Samsung's Kim Claims No Limit to Scaling]</ref> As a result 2030 and beyond may see a shift in technology to enable smaller components in the form of [[silicene]] or [[silicon nanotubes]].
-In 2008, transistors one atom thick and ten atoms wide were made by UK researchers. They were carved from [[graphene]], predicted by some to one day oust silicon as the basis of future computing. Graphene is a material made from flat sheets of carbon in a honeycomb arrangement, and is a leading contender. A team at the [[University of Manchester]], UK, used it to make some of the smallest transistors ever: devices only 1&nbsp;nm across that contain just a few carbon rings.<ref>[http://www.newscientist.com/article/dn13730-atomthick-material-runs-rings-around-silicon.html]</ref>
+In 2008, transistors one atom thick and ten atoms wide were made by UK researchers. They were carved from [[graphene]], predicted by some to one day oust silicon as the basis of future computing. Graphene is a material made from flat sheets of carbon in a honeycomb arrangement, and is a leading contender. A team at the [[University of Manchester]], UK, used it to make some of the smallest transistors ever: devices only 1&nbsp;nm across that contain just a few carbon rings.<ref>[http://www.newscientist.com/article/dn13730-atomthick-material-runs-rings-around-silicon.html Atom-thick material runs rings around silicon]</ref>
 == References ==

Semiconductor device fabrication

MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977 1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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