Talk:Reverse short-channel effect

short channel effects

The article seems incorrect to me. RSCE is increase of the threshold voltage at shorter gate length, unlike normal short channel effect where Vth is lower in shorter devices (often called threshold voltage roll-off). As the article points out correctly, shorter devices have higher average doping concentration in the channel as the source and drain halos overlap. In addition, transient diffusion of dopants due to injection of point defects are shown responsible for the pile up of the dopants near the oxide interface and increase of the threshold voltage. --72.70.82.244

Thanks for bringing it up in the talk page. Unfortunately it caught my eye nearly 7 years later. I guess, nobody with technical knowledge regarding this subject noticed this even this. Yes, the definition was messed up. I have cleaned them up and provided some citations. I'll try to improve the article. --Deepon (talk) 15:56, 11 June 2014 (UTC)[reply]

No longer orphan

This article is no longer an orphan. A reference to it has been added on the article Short-channel effect.--therash09 (talk) 22:25, 8 June 2014 (UTC)[reply]