130 nanometer

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The 130 nanometer (130 nm) process refers to the level of metal-oxide-silicon (MOS) semiconductor process technology that was reached around the 2001-2002 timeframe, by leading semiconductor companies like Fujitsu,[1] IBM, Intel, Texas Instruments, and TSMC.

The origin of the 130 nm value is historical, as it reflects a trend of 70% scaling every 2–3 years. The naming is formally determined by the International Technology Roadmap for Semiconductors (ITRS).

Some of the first CPUs manufactured with this process include Intel Tualatin family of Pentium III processors.

Background[edit]

Their first MOSFET demonstrated by Egyptian engineer Mohamed Atalla and Korean engineer Dawon Kahng in 1960 had a gate length of 20 µm and a gate oxide thickness of 100 nm.[2]

In 2001, a 100 nm gate length was reached by Fujitsu[1] and IBM.

Processors using 130 nm manufacturing technology[edit]

References[edit]

  1. ^ a b 65nm CMOS Process Technology
  2. ^ Sze, Simon M. (2002). Semiconductor Devices: Physics and Technology (2nd ed.). Wiley. p. 4. ISBN 0-471-33372-7.
  3. ^ Krewell, Kevin (21 October 2002). "Fujitsu's SPARC64 V Is Real Deal". Microprocessor Report.
  4. ^ Микропроцессор Эльбрус/МЦСТ. Mcst.ru (in Russian). Retrieved 2015-09-10.
  5. ^ "Микропроцессор МЦСТ R500S/МЦСТ". Mcst.ru (in Russian). Archived from the original on 2015-11-01. Retrieved 2015-09-10.
  6. ^ "CPU from DM&P". Dmp.com.tw. Retrieved 2015-09-10.


Preceded by
180 nm
MOSFET manufacturing processes Succeeded by
90 nm