7 nanometer

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In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 7 nanometer (7 nm) node as the technology node following the 10 nm node.

Single transistor 7 nm scale devices were first produced in the early 2000s – as of 2016 commercial production of 7 nm chips is at a development stage.


Technology demos[edit]

In 2002, IBM produced a 6 nm transistor.[1]

In 2003, NEC produced a 5 nm transistor.[2]

In 2012, IBM produced a sub-10 nm carbon nanotube transistor that outperformed silicon on speed and power.[3] "The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies," according to the abstract of the paper in Nano Letters.[4]

In July 2015, IBM announced that they had built the first functional transistors with 7 nm technology, using a silicon-germanium process.[5][6]

Expected commercialisation and technologies[edit]

Although Intel has not yet divulged any certain plans to manufacturers or retailers, it has already stated that it would no longer use silicon at this node.[7] A possible replacement material for silicon would be indium gallium arsenide (InGaAs).[8]

In April 2016, TSMC announced that 7 nm trial production would begin in the first half of 2017.[9]

In September 2016, GlobalFoundries announced trial production in the second half of 2017 and risk production in early 2018, with test chips already running.[10]


External links[edit]

Preceded by
10 nm
CMOS manufacturing processes Succeeded by
5 nm