In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 7 nanometer (7 nm) node as the technology node following the 10 nm node.
Single transistor 7 nm scale devices were first produced in the early 2000s – as of 2016 commercial production of 7 nm chips is at a development stage.
In 2012, IBM produced a sub-10 nm carbon nanotube transistor that outperformed silicon on speed and power. "The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies," according to the abstract of the paper in Nano Letters.
Expected commercialisation and technologies
Although Intel has not yet divulged any certain plans to manufacturers or retailers, it has already stated that it would no longer use silicon at this node. A possible replacement material for silicon would be indium gallium arsenide (InGaAs).
- IBM claims world's smallest silicon transistor
- NEC test-produces world's smallest transistor.
- "IBM: Tiny carbon nanotube transistor outshines silicon". Cnet.com. January 30, 2012.
- Franklin, Aaron D.; et al. (2012). "Sub-10 nm Carbon Nanotube Transistor". Nano Letters. 12 (2): 758–762. doi:10.1021/nl203701g.
- IBM Research builds functional 7nm processor
- IBM Discloses Working Version of a Much Higher-Capacity Chip - NYTimes.com
- "ISSCC 2015: Intel 10 nm Last Silicon Node". Android Authority.
- Intel forges ahead to 10nm, will move away from silicon at 7nm. Feb 2015
- WATCH OUT INTEL AND SAMSUNG: TSMC IS GEARING UP FOR 7NM PROCESSING WITH TRIAL PRODUCTION
- Summary technology trend targets lists the 2013 predictions of the 7nm node characteristics.
|CMOS manufacturing processes||Succeeded by
|This electronics-related article is a stub. You can help Wikipedia by expanding it.|