800 nm process

From Wikipedia, the free encyclopedia
  (Redirected from 800 nanometer)
Jump to navigation Jump to search

The 800 nm process refers to the level of MOSFET semiconductor fabrication process technology that was reached around the 1987–1990 timeframe, by leading semiconductor companies like NTT, NEC, Toshiba, IBM, Hitachi, Matsushita, Mitsubishi Electric and Intel.

Products featuring 800 nm manufacturing process[edit]


  1. ^ a b Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). CORE. Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019.
  2. ^ "IEEE Andrew S. Grove Award Recipients". IEEE Andrew S. Grove Award. Institute of Electrical and Electronics Engineers. Retrieved 4 July 2019.
  3. ^ a b c "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  4. ^ "Intel i960 Embedded Microprocessor". National High Magnetic Field Laboratory. Florida State University. 3 March 2003. Archived from the original on 3 March 2003. Retrieved 29 June 2019.
Preceded by
1 μm
CMOS manufacturing processes Succeeded by
600 nm