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Non-Quasi Static model

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This is an old revision of this page, as edited by Störm (talk | contribs) at 04:51, 2 November 2017 (Störm moved page NQS to Non-Quasi Static model). The present address (URL) is a permanent link to this revision, which may differ significantly from the current revision.

For NQs, see National Qualifications.

NQS - Non-Quasi Static model - is a transistor model used in analogue/mixed signal IC design. It becomes necessary to use an NQS model when the operational frequency of the device is in the range of its transit time. Normally, in a quasi-static (QS) model, voltage changes in the MOS transistor channel are assumed to be instantaneous. However, in an NQS model voltage changes relating to charge carriers are delayed.[1]

References

  1. ^ Yuhua Cheng and Chenming Hu, Mosfet Modeling & BSIM3 User’s Guide, 2002


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