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Advanced-Random Access Memory (A-RAM) is a type of dynamic random-access memory based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada, UGR (Spain) in collaboration with the Centre National de la Recherche Scientifique, CNRS (France). It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate FETs (MuFETs).[clarification needed]

The conventional 1-Transistor + 1-Capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. Beyond the 45 nm node, the DRAM industry will need new concepts avoiding the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, where the A-RAM is included, replaces the storage capacitor for the floating body of SOI transistors to store the charge.


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