|Computer memory types|
|Early stage NVRAM|
Advanced-Random Access Memory (A-RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs).
The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45 nm, the DRAM industry would need to avoid the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge.
The universities obtained at least one patent on the technology, and tried to license it in 2010. The University of Granada ran a web site promoting the technology, updated through 2010. A version called A2RAM was demonstrated in 2012.
- Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz (October 5, 2009). "A-RAM: Novel capacitor-less DRAM memory". 2009 International SOI Conference. IEEE. doi:10.1109/SOI.2009.5318734.
- Noel Rodriguez, Sorin Cristoloveanu and Francisco Gamiz (September 2010). "A-RAM Memory Cell: Concept and Operation". Electron Device Letters. IEEE: 972–974. doi:10.1109/LED.2010.2055531.
- Patent number: FR09/52453, "Point mémoire RAM à un transistor", Institut National de la Propriété Industrielle
- Peter Clarke (October 19, 2010). "France's CNRS offers nano-memory IP". EE Times. Retrieved September 30, 2016.
- "A-RAM: The Advanced DRAM Substitute". Web site. University of Granada. 2010. Archived from the original on May 18, 2013. Retrieved September 30, 2016.
- University of Granada (November 22, 2012). "Scientists design a revolutionary data storage device". Science Daily news release. Retrieved September 30, 2016.