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The AF107 is the European name for an early (c. 1960) germanium-based (A) bipolar junction transistor of PNP polarity intended for high frequency use (F). It shares most of its characteristics with the AF108. Both models use a non-standard round metallic housing of 9 millimetre diameter which is electrically connected to the collector. At a housing temperature of 45 °C, these transistors can handle an internal power dissipation of 0.5 watt. Unit gain (β = 1) is reached at typically 250 MHz (minimum 150 MHz).[1]


  1. ^ Siemens Halbleiter-Datenbuch 1961, pp. 38–39