Adrian Mihai Ionescu
|Adrian Mihai Ionescu|
|Fields||Silicon nanotechnology, Radio Frequency MEMS and NEMS, Small Swing Switches, Modeling and Simulation of Solid-State Electronic Devices|
|Institutions||Swiss Federal Institute of Technology in Lausanne|
National Polytechnic Institutes (France)
Adrian (Mihai) Ionescu is a full Professor at the Swiss Federal Institute of Technology in Lausanne (EPFL).
He received the B.S./M.S. and Ph.D. degrees from the Polytechnic Institute of Bucharest, Romania and the National Polytechnic Institute of Grenoble, France, in 1989 and 1997, respectively. He has held staff and/or visiting positions at LETI-CEA, Grenoble, France, LPCS-ENSERG, Grenoble, France and Stanford University, USA, in 1998 and 1999.
He received the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for remarkable contributions to the progress in engineering sciences in the domain of electronics. He was the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013.
He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB). He is appointed as national representative of Switzerland for the European Nanoelectronics Initiative Advisory Council (ENIAC) and member of the Scientific Committee of CATRENE. Dr. Ionescu is the European Chapter Chair of the ITRS Emerging Research Devices Working Group.
Field of research
As director of the Nanoelectronic Devices group from the Swiss Federal Institute of Technology in Lausanne (EPFL), Prof Adrian Ionescu is focusing on these particular topics:
Beyond CMOS technology & devices
o Silicon nanowire Single Electron Transistor and hybrid SET-CMOS circuits
o Small slope switches: tunnel FET & IMOS (PIMOS) on CMOS platforms
o Junctionless transistors using top-down Si nanowire/Fin platforms
More-than-Moore devices & circuits
o RF MEMS & NEMS
o MHz to GHz silicon and SOI resonators & oscillators
o Hybrid NEM-FET as sleep transistor
Non-silicon devices & circuits
o CNT resonators and circuit applications
o CNTs for programmable interconnects
o Organic transistors for Radio-On-Paper
Cooperation with international projects
Guardian Angels for a Smarter Life
Prof Adrian Ionescu is the Director of the Guardian Angels for a smarter life FET Flagship project.
The project Guardian Angels for a Smarter Life is a research platform in nanoscience, zero-power research and advanced ICT headed by Prof Adrian Ionescu (Swiss Federal Institute of Technology in Lausanne) and Prof Christofer Hierold (ETH Zurich). The project assembles a pan-European network - 28 academic, R&D and industrial partners from 13 European countries - to create intelligent and autonomous systems serving individuals in their daily lives. It will meet the technological challenge of weaving together energy efficient information processing, sensing, communication and energy harvesting.
The project goal is to develop environmentally-friendly, battery-free technologies for these electronic personal assistants, so that they will harvest their own energy rather than requiring an external power source.
The GA flagship project will show the feasibility and functionality of devices in three pre-defined generations of demonstrators: physical, environmental and emotional domains. The applications are based on the concept of a smarter life, e.g. a lifestyle that benefits from the instant availability of relevant information, more interconnectedness between devices fitted with all sorts of sensors, and intuitive usability.
The Nanolab at the Swiss Federal Institute of Technology in Lausanne (EPFL) is coordinating new European research project dubbed E2SWITCH. The project has revealed details about its plans to develop a next-generation chip technology called tunnel field-effect transistors (TFETs). The project also includes IBM, Forschungszentrum Jülich, the University of Lund, ETHZ, Imec, CCS, SCIPROM and IUNET. The project has been funded for up to 4.3 million euros over 42 months
The main goal is to try to reduce the consumption of electrical devices at the core level such as transistors and nanowires. By reducing the operating voltage of each device, the overall consumption will be greatly reduced.
Honors and Awards
- Recipient of the IBM Faculty Award in Engineering in 2013.
- Elected expert of the Swiss Technical Academy of Sciences, Switzerland, 2012.
- Certificate of Excellence in Future Emerging Technologies of the European Commission, FET Flagship Ceremony organized the European Commission, Budapest, May 3‐4, 2011.
- André Blondel Medal 2009: for remarkable contributions to the progress in engineering sciences in the domain of electronics from the Society of Electrical and Electronics Engineering (SEE, Paris), France.
- Elected Member of Scientific Committee of the Cluster for Application and Technology Research on NanoElectronics in Europe, (CATRENE): 2008 – now.
- Elected Member of European Nanoelectronics Initiative Advisory Council (ENIAC), Academic representative of Switzerland (Europe): 2006 – now.
- Elected Member of International Planning Working Group for Nanoelectronics: 2007‐ 2012.
- Annual Award of the Romanian Academy of Technical Sciences, 1994, for contributions to SOI technology.
- A. M. Ionescu & H.Riel "Tunnel field-effect transistors as energy-efficient electronic switches", Nature 479,329–337(17 November 2011) doi:10.1038/nature10679.
- G. A. Salvatore, L. Lattanzio, D. Bouvet, A. M. Ionescu, "Modeling the temperature dependence of Fe-FET static characteristics based on Landau's theory", IEEE Transactions on Electron Devices, vol. 58, no. 9, pp. 3162–3169, September 2011.
- J. Perruisseau-Carrier, F. Bongard, M. Fernandez-Bolanos, and A. M. Ionescu. A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves. IEEE Microwave and Wireless Components Letters, 21:456-458, 2011
- L. Lattanzio, A. Biswas, L. De Michielis, A. M. Ionescu, "A tunneling Field-Effect Transistor exploiting internally combined Band-to-Band and barrier tunneling mechanisms", Applied Physics Letters, vol. 98, iss. 12, 123504, March 2011.
- A. Arun, H. Le Poche, T. Idda, D. Acquaviva, M. Fernandez-Bolaños, P. Pantigny, P. Salet and A. M. Ionescu, "Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines", Nanotechnology, 22, 025203, January 2011.
Notes and references
- EPFL News Mediacom, "Ultra-low consumption for the future of electronics", EPFL news, 25. Sept 2014