Breakdown voltages can be as high as 750 V.
According to Maxim website, it is an innovative process characteristics that provides the following features:
- high break-down voltage but small transistors,
- quite low on-resistance, which is important for the integration of multiple power FETs of low resistivity,
- double-metal-layer to support hi-current
- combining thin film and poly-poly caps (in silicon). High-accuracy references can be integrated.
According to Dongbu HiTek's news, it claims to launch the first 0.18-micrometre BCDMOS process in industry. The new process integrates logic, analog and hi-voltage functions to reduce size.