Boron arsenide

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Boron Arsenide
B12As2
Identifiers
CAS number 12005-69-5 YesY
Properties
Molecular formula BAs or B12As2
Molar mass 85.733 g/mol
Density 5.22 g/cm3, solid
Melting point 2,027 °C (3,681 °F; 2,300 K)
Solubility in water Insoluble
Band gap 1.50 eV(BAs); 3.47 eV(B12As2)
Hazards
EU classification N/A
Related compounds
Other anions Boron nitride
Boron phosphide
Boron antimonide
Other cations Aluminium arsenide
Gallium arsenide
Indium arsenide
Except where noted otherwise, data are given for materials in their standard state (at 25 °C (77 °F), 100 kPa)
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Infobox references

Boron arsenide is a chemical compound of boron and arsenic. It is a cubic (sphalerite) semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide.

Boron arsenide also occurs as an icosahedral boride, B12As2.[1] It belongs to R-3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As-As chains. It's a wide bandgap semiconductor (3.47 eV) with the extraordinary ability to “self-heal” radiation damage. This form can be grown on substrates such as silicon carbide.

Computational calculations have shown that Boron arsenide has remarkable thermal conductivity. At room temperature, it is expected to exhibit heat conductivity, κ, of over 2005 W/(m·K), which is comparable to diamond and graphite.[2]

Applications[edit]

Solar cells can be fabricated from boron arsenide. It's also an attractive choice for devices exposed to radiation which can severely degrade the electrical properties of conventional semiconductors, causing devices to cease functioning. Among the particularly intriguing possible applications for B12As2 are beta cells, devices capable of producing electrical energy by coupling a radioactive beta emitter to a semiconductor junction, and other space electronics.

Teams at Naval Research Laboratory and Boston College found the calculated thermal conductivity of cubic boron arsenide is remarkably high, more than 2000 Watts per meter per Kelvin at room temperature and exceeding that of diamond at higher temperatures, according to David Broido (Boston College) and co-authors Tom Reinecke (Naval Research Laboratory)


References[edit]

  • Chen, H.; Wang, G.; Dudley, M.; Xu, Z.; Edgar, J. H.; Batten, T.; Kuball, M.; Zhang, L.; Zhu, Y. (2008). "Single-Crystalline B12As2 on m-plane (1-100)15R-SiC". Applied Physics Letters 92 (23): 231917. doi:10.1063/1.2945635. 
  • Hart, G. L. W.; Zunger, A. (2000). "Electronic Structure of BAs and Boride III-V Alloys". Physical Review B 62 (20): 13522–13537. arXiv:cond-mat/0009063. doi:10.1103/PhysRevB.62.13522. 
  • King, R. B. (1999). Boron Chemistry at the Millennium. New York: Elsevier. ISBN 0-444-72006-5. 
  • Ownby, P. D. (1975). "Ordered Boron Arsenide". Journal of the American Ceramic Society 58 (7–8): 359–360. doi:10.1111/j.1151-2916.1975.tb11514.x. 

External links[edit]