|BAs or B12As2|
|Molar mass||85.733 g/mol|
|Density||5.22 g/cm3, solid|
|Melting point||2,027 °C (3,681 °F; 2,300 K)|
|Band gap||1.50 eV(BAs); 3.47 eV(B12As2)|
EU classification (DSD)
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
|what is ?)(|
Boron arsenide is the chemical compound BAs. Other boron arsenide compounds are known, including the subarsenide B12As2
It is a cubic (sphalerite) semiconductor in the III-V family with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide to produce ternary and quaternary semiconductors. Cubic BAs is reported to decompose to the subarsenide B12As2 at temperatures above 920 °C.
Boron arsenide also occurs as subarsenides, including icosahedral boride, B12As2. It belongs to R-3m space group with a rhombohedral structure based on clusters of boron atoms and two-atom As-As chains. It is a wide-bandgap semiconductor (3.47 eV) with the extraordinary ability to “self-heal” radiation damage. This form can be grown on substrates such as silicon carbide.
The subarsenide B12As2 may be an attractive choice for devices exposed to radiation which degrades the electrical properties of conventional semiconductors, such as betavoltaic cells, which generate electrical energy by coupling a radioactive beta emitter to a semiconductor junction, and other space electronics.
A team at the Naval Research Laboratory and Boston College found the calculated thermal conductivity of cubic boron arsenide, BAs, is remarkably high. At room temperature, it is expected to exhibit heat conductivity, κ, of over 2000 W/(m·K), which is comparable to diamond and graphite, and may exceed that of diamond at higher temperatures, according to researchers L. Lindsay, D.A. Broido and T.L. Reinecke. Subsequent measurements obtained a κ of only about 200 W/(m·K), but it is still theorized that very-high-quality single-crystal samples will exhibit the predicted high thermal conductivity.
- "Semiconductor Research". University Bristol, Applied Spectroscopy Group. Archived from the original on 2014-02-01.
- Hart, G. L. W.; Zunger, A. (2000). "Electronic Structure of BAs and Boride III-V Alloys". Physical Review B. 62 (20): 13522–13537. arXiv: . doi:10.1103/PhysRevB.62.13522.
- J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, R. C. Reedy, A. B. Swartzlander, B. M. Keyes, and A. G. Norman, "BGaInAs alloys lattice matched to GaAs," Applied Phys. Lett. 76, No. 11, 13 Mar. 2000.
- T. L. Chu and A. E. Hyslop, J. Electrochem. Soc., Vol. 121, 412 (1974).
- M. Carrard, D. Emin, and L. Zuppiroli, Phys. Rev. B, Vol. 51, 11270 (1995).
- Chen, H.; Wang, G.; Dudley, M.; Xu, Z.; Edgar, J. H.; Batten, T.; Kuball, M.; Zhang, L.; Zhu, Y. (2008). "Single-Crystalline B12As2 on m-plane (1-100)15R-SiC". Applied Physics Letters. 92 (23): 231917. doi:10.1063/1.2945635.
- Boone, J. L. and Vandoren, T. P., Boron arsenide thin film solar cell development, Final Report, Eagle-Picher Industries, Inc., Miami, OK. abstract (retrieved May 15, 2014)
- Phys.org news, An unlikely competitor for diamond as the best thermal conductor, Jul 08, 2013 (retrieved May 15, 2014)
- First-principles determination of ultrahigh thermal conductivity of boron arsenide: A competitor for diamond?
- Physical Review B, Boron arsenide phonon dispersion from inelastic x-ray scattering: Potential for ultrahigh thermal conductivity
- King, R. B. (1999). Boron Chemistry at the Millennium. New York: Elsevier. ISBN 0-444-72006-5.
- Ownby, P. D. (1975). "Ordered Boron Arsenide". Journal of the American Ceramic Society. 58 (7–8): 359–360. doi:10.1111/j.1151-2916.1975.tb11514.x.