This article has multiple issues. Please help improve it or discuss these issues on the talk page. (Learn how and when to remove these template messages)(Learn how and when to remove this template message)
|Other names||Chenming Calvin Hu|
|Institutions||University of California, Berkeley|
Chenming Calvin Hu (Chinese: 胡正明; pinyin: Hú Zhèngmíng) is an electronic engineer who specializes in microelectronics. He is TSMC Distinguished Professor Emeritus in the electronic engineering and computer science department of the University of California, Berkeley, in the United States. In 2009, the Institute of Electrical and Electronics Engineers described him as a “microelectronics visionary … whose seminal work on metal-oxide semiconductor MOS reliability and device modeling has had enormous impact on the continued scaling of electronic devices”.
Education and career
Hu completed his bachelor's degree at the National Taiwan University in Taipei in 1968, and completed master's and doctoral degrees at the University of California Berkeley in 1970 and 1973, respectively.
He has made significant contributions in microelectronics research. He was one of the developers of the FinFET, a multi-gated MOSFET device, and was among the creators of the Berkeley Short‐Channel IGFET Model family of MOSFETs. Since the 1980s, Hu has written extensively on the reliability of the silicon oxide layer in semi-conductors.:vii
Between 2001 and 2004 Hu was the chief technology officer of Taiwan Semiconductor Manufacturing Company. He has sat on the board of several companies, including FormFactor, MoSys and SanDisk; he was chairman of the board of Celestry Design Solutions, which he founded.
Awards and honors
- 1997: elected to the United States National Academy of Engineering
- 1997: IEEE Jack Morton Award, "for outstanding contributions to semiconductor devices and technology"
- 2002: IEEE Solid-State Circuits Award (for developing the first international standard transistor model BSIM)
- 2002: IEEE Paul Rappaport Award
- 2009: IEEE Jun-ichi Nishizawa Medal, "for technical contributions to MOS device reliability, scaling of CMOS and compact device modeling"
- 2011: Asian American Engineer of the year award,
- 2011: National Taiwan University Distinguished Alumni Award,
- 2011: Semiconductor Industry Association Award,
- 2013: Phil Kaufman Award for Distinguished Contributions to EDA,
- 2014: National Medal of Technology and Innovation, given at the White House by Barack Obama in 2016.
- 2015: SEMI Award for North America, for the BSIM transistor family.
- Chenming Calvin Hu, Microelectronics Visionary, to Receive 2009 IEEE Jun‐Ichi Nishizawa Medal. Institute of Electrical and Electronics Engineers. Archived June 13, 2010.
- Chenming Hu. Forbes.com. Archived August 10, 2008.
- David J. Dumin (2002). Oxide Reliability: A Summary of Silicon Oxide Wearout, Breakdown, and Reliability. River Edge, New Jersey: World Scientific. ISBN 9789810248420.
- "NAE Members Directory - Dr. Chenming Hu". NAE. Retrieved January 21, 2011.
- IEEE Jack A. Morton Award: Recipients. Institute of Electrical and Electronics Engineers. Accessed July 2016.
- "IEEE Donald O. Pederson Award in Solid-State Circuits Recipients" (PDF). IEEE. Retrieved November 15, 2010.
- IEEE Jun-ichi Nishizawa Medal: Recipients. Institute of Electrical and Electronics Engineers. Archived March 4, 2016.
- Mark LaPedus (June 17, 2009). Hu receives IEEE award. EE Times. Archived July 9, 2016.
- "Asian American Engineer, Award".
- "National Taiwan University Distinguished Alumni Award".
- "Semiconductor Industry Association Award" (PDF).
- "Kaufman Award".
- "Remarks by the President at Ceremony Honoring the Recipients of the National Medal of Science, and the National Medal of Technology and Innovation". The White House - President Barack Obama. May 19, 2016.
National Medal of Technology and Innovation to Chenming Hu, University of California, Berkeley, California. For pioneering innovations in microelectronics including reliability technologies, the first industry-standard model for circuit design, and the first 3-dimensional transistors, which radically advanced semiconductor technology.
- SEMI Award for North America: About the SEMI Award. Semiconductor Equipment and Materials International. Accessed July 2016>