|Computer memory types|
|Early stage NVRAM|
ETA-RAM is a trademark for a novel RAM computer memory technology developed by Eta Semiconductor. ETA-RAM has the benefits of improving on both parameters (cost and dissipated power) combining the advantages of both DRAM and SRAM: lower cost of existing DRAMs, lower power dissipation and higher performance than SRAMs. The cost advantages are obtained by utilizing a much simpler process technology and by reducing significantly the silicon area of the cells: an ETA-RAM cell requires about the same silicon area of modern DRAM devices. The improved power dissipation is obtained by reducing the current utilized in reading and writing the data bits in the cell and by removing the refresh requirements. At the same time, ETA-RAM offers writing and reading data rate higher than the standard six-transistor SRAM cell used in cache memory. In order to combine the advantages of the two RAM types, Eta Semiconductor adopted a new approach based on building static memory cells using a single process structure of minimum dimensions that by itself cover the same function of a conventional SRAM. This is possible using a new CMOS Technology for the manufacturing of high-density integrated circuits invented by the founders of Eta Semiconductor. Such technology, said ETA CMOS, defines novel structures that, thanks to metal junctions and the use of stacked gates, develop simultaneously the functions of more traditional transistors.