Gallium antimonide

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Gallium antimonide
IUPAC name
Gallium(III) antimonide
Other names
Gallium antimonide
3D model (Jmol)
ECHA InfoCard 100.031.859
Molar mass 191.483 g/mol
Density 5.614 g/cm3
Melting point 712 °C (1,314 °F; 985 K)
Band gap 0.726 eV (300 K)
Electron mobility 3000 cm2/(V*s) (300 K)
Thermal conductivity 0.32 W/(cm*K) (300 K)
Sphalerite, cF8
F-43m, No. 216
NFPA 704
Flammability code 0: Will not burn. E.g., water Health code 1: Exposure would cause irritation but only minor residual injury. E.g., turpentine Reactivity code 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g., liquid nitrogen Special hazards (white): no codeNFPA 704 four-colored diamond
Flash point Non-flammable
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm.


The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide.[1] The Ga-Sb phase equilibria was investigated in 1955 by Koster[2] and by Greenfield.[3]


GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

See also[edit]


  1. ^ Goldschmidt, V. M., Skr. Akad. Oslo, 8 (1926).
  2. ^ Koster, W.; Thoma, B., Z. Metallkd. 46, 291 (1955).
  3. ^ Greenfield, I. G.; Smith, R. L., Trans. AIME 203, 351 (1955).

External links[edit]