Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Gallium acetylacetonate, also referred to as Ga(acac)3, is a coordination complex with formula Ga(C5H7O2)3. This gallium complex with three acetylacetone ligands is used in research on Ga-containing materials. The molecule has D3 symmetry, being isomorphous with other octahedral tris(acetylacetonate)s.
Gallium oxide thin films can be created with atomic layer epitaxy (ALE) by combining gallium acetylacetonate with either water or ozone as the precursor. Ga(acac)3 can also be used for low temperature growth of high purity gallium nitride nano-wires and nano-needles.
- Dymock, K.; Palenik, Gus J. "Tris(acetylacetonato)gallium(III)" Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry (1974), volume 30, 1364-6. doi:10.1107/S0567740874004833
- "Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy"
- "Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires"
- "Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor"
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