GlobalFoundries

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GlobalFoundries Inc.
TypePrivate
IndustrySemiconductor manufacturer
FoundedMarch 2, 2009; 12 years ago (2009-03-02)
HeadquartersMalta, New York, U.S.
Key people
Dr. Thomas Caulfield (CEO)[1]
ProductsSemiconductor
Number of employees
15,000[2]
ParentMubadala Investment Company
Websiteglobalfoundries.com

GlobalFoundries Inc. (GF) is a U.S.-based semiconductor manufacturer headquartered in Malta, New York, United States. [3] GlobalFoundries was created by the divestiture of the manufacturing arm of Advanced Micro Devices (AMD). Global Foundries is owned by Mubadala Investment Company.

GlobalFoundries is one of the world's five leading semiconductor manufacturers[4] and produces chips for more than 70% of the $86 billion semiconductor manufacturing services industry. The company manufactures chips designed for high-growth markets such as mobility, automotive, computing and wired connectivity, consumer internet of things (IoT) and industrial.

As of 2021, GlobalFoundries is the only semiconductor manufacturer with simultaneous operations in Singapore, Europe and North America. The company has one 200mm and one 300mm fabrication plants in Singapore, one 300 mm plant in Dresden, Germany, and three plants in the United States: one 200 mm plant in Burlington, Vermont (where it is the largest private employer)[5] and two 300 mm plants in New York: one in East Fishkill and one in Malta.[6]

GlobalFoundries is a “Trusted Foundry” for the U.S. government and has similar designations in Singapore and Dresden including certified international Common Criteria standard (ISO 15408, CC Version 3.1).[7][8]

GlobalFoundries has more than 250 customers around the world and has 15,000 employees representing 92 nationalities in 14 countries.

GlobalFoundries holds more than 10,000 patents and applications.

GlobalFoundries has said it plans to become a publicly traded company in 2022.[9]

Overview[edit]

On October 7, 2008, AMD announced plans to go fabless and spin off their semiconductor manufacturing business into a new company temporarily called The Foundry Company. Mubadala announced their subsidiary Advanced Technology Investment Company (ATIC) agreed to pay $700 million to increase their stake in AMD's semiconductor manufacturing business to 55.6% (up from 8.1%). Mubadala will invest $314 million for 58 million new shares, increasing their stake in AMD to 19.3%. $1.2 billion of AMD's debt will be transferred to The Foundry Company.[10] On 8 December 2008, amendments were announced. AMD will own approximately 34.2% and ATIC will own approximately 65.8% of The Foundry Company.[11]

On March 4, 2009, GlobalFoundries was officially announced.[12] On September 7, 2009, ATIC announced it would acquire Chartered Semiconductor for S$2.5 billion (US$1.8 billion) and integrate Chartered Semiconductor into GlobalFoundries.[13] On January 13, 2010, GlobalFoundries announced it had finalized the integration of Chartered Semiconductor.[14]

On March 4, 2012, AMD announced they divested their final 14% stake in the company, which concluded AMD's multi-year plan to divest its manufacturing arm.[15]

On October 20, 2014, IBM announced the sale of its microelectronics business to GlobalFoundries.[16]

As of 2015, the firm owned ten fabrication plants. Fab 1 is in Dresden, Germany. Fabs 2 through 7 are in Singapore. Fabs 8 through 10 are in the northeast United States. These sites are supported by a global network of R&D, design enablement, and customer support in Singapore, China, Taiwan, Japan, India, the United States, Germany, and the United Kingdom.[17] In February 2017, the company announced a new 300 Fab [Fab 11] in China for growing semiconductor market in China.[18]

In 2016, GlobalFoundries licensed the 14 nm 14LPP FinFET process from Samsung Electronics. In 2018, GlobalFoundries developed the 12 nm 12LP node based on Samsung's 14 nm 14LPP process.[19]

On August 27, 2018, GlobalFoundries announced it had cancelled their 7LP process due to a strategy shift to focus on specialized processes instead of leading edge performance.[20]

On January 29, 2019, AMD announced an amended wafer supply agreement with GlobalFoundries. AMD now has full flexibility for wafer purchases from any foundry at 7 nm or beyond. AMD and GlobalFoundries agreed to commitments and pricing at 12 nm for 2019 through 2021.[21]

On May 20, 2019, Marvell announced it would acquire Avera Semi from GlobalFoundries for $650 million and potentially an additional $90 million. Avera Semi was GlobalFoundries' ASIC Solutions division, which had been a part of IBM's semiconductor manufacturing business.[22] On February 1, 2019, GlobalFoundries announced the $236 million sale of its Fab 3E in Tampines, Singapore, to Vanguard International Semiconductor (VIS) as part of their plan to exit the MEMS business by December 31, 2019.[23] on April 22, 2019, GlobalFoundries announced the $430 million sale of their Fab 10 in East Fishkill, New York, to ON Semiconductor. GlobalFoundries has received $100 million and will receive $330 million at the end of 2022 when ON Semiconductor will gain full operational control. The 300mm fab is capable of 65 nm to 40 nm and was a part of IBM.[24] On August 15, 2019, GlobalFoundries announced a multi-year supply agreement with Toppan Photomasks. The agreement included Toppan acquiring GlobalFoundries' Burlington photomask facility.[25]

In February 2020, GlobalFoundries announced that its embedded magnetoresistive non-volatile memory (eMRAM) has entered production which is the industry's first production ready eMRAM.[26]

In May 2020, GlobalFoundries stated it was fully abandoning its plans of opening Fab 11 in Chengdu, China due to reported rivalry between the latter and the US.[27] This was three years after the manufacturer announced it would invest $10 billion to open the new fab; the fab was never brought online.[28]

GlobalFoundries vs. TSMC et al[edit]

On August 26, 2019, GlobalFoundries filed patent infringement lawsuits against TSMC and some of TSMC's customers[29] in the US and Germany. GlobalFoundries claims TSMC's 7 nm, 10 nm, 12 nm, 16 nm, and 28 nm nodes have infringed on 16 of its patents. Lawsuits were filed in the U.S. International Trade Commission, the U.S. Federal District Courts in the Districts of Delaware, the Western District of Texas, the Regional Courts of Düsseldorf, and Mannheim in Germany.[30] GlobalFoundries has named 20 defendants: Apple, Broadcom, MediaTek, Nvidia, Qualcomm, Xilinx, Arista, ASUS, BLU, Cisco, Google, Hisense, Lenovo, Motorola, TCL, OnePlus, Avnet/EBV, Digi-Key and Mouser.[31] On August 27, TSMC announced it was reviewing the complaints filed, but are confident that the allegations are baseless and will vigorously defend its proprietary technology.[32]

On October 1, 2019, TSMC filed patent infringement lawsuits against GlobalFoundries in the US, Germany and Singapore. TSMC claimed GlobalFoundries' 12 nm, 14 nm, 22 nm, 28 nm and 40 nm nodes have infringed on 25 of its patents.[33]

On October 29, 2019, TSMC and GlobalFoundries announced a resolution to the dispute. The companies agreed to a new life-of-patents cross-license for all of their existing semiconductor patents as well as new patents to be filed by the companies in the next ten years.[34][35][36][37][38]

List of GlobalFoundries CEOs[edit]

Original CEO: Doug Grose (until July 2011)[39]

Subsequent: Ajit Manocha (until January 2014)[40][circular reference]

Subsequent: Sanjay Jha (until May 2018)[41] Subsequent: Tom Caulfield (current CEO)[42]

Fabrication plants[edit]

Name Wafer Location Process
Fab 1 300 mm Dresden, Germany 51°07′30″N 13°42′58″E / 51.125°N 13.716°E / 51.125; 13.716 (GlobalFoundries Fab 1, Dresden) 55, 45, 40, 32, 28, 22 nm, 12 nm
Fab 2 200 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 600–350 nm
Fab 3/5 200 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 350–180 nm
Fab 3E 200 mm Tampines, Singapore (2019: sold to VIS) 1°22′16″N 103°55′44″E / 1.371°N 103.929°E / 1.371; 103.929 (GlobalFoundries Fabs in Tampines, Singapore) 180 nm
Fab 6 200 mm Woodlands, Singapore (converted to 300 mm and merged into Fab 7) 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 180–110 nm
Fab 7 300 mm Woodlands, Singapore 1°26′10″N 103°45′58″E / 1.436°N 103.766°E / 1.436; 103.766 (GlobalFoundries Fabs in Woodlands, Singapore) 130–40 nm
Fab 8 300 mm Luther Forest Technology Campus, Saratoga County, New York, United States 42°58′12″N 73°45′22″W / 42.970°N 73.756°W / 42.970; -73.756 (GlobalFoundries Fab 8) 28, 20, 14 nm
Fab 9 200 mm Essex Junction, Vermont, United States 44°29′N 73°06′W / 44.48°N 73.10°W / 44.48; -73.10 (GlobalFoundries Fab 9)[43] 350–90 nm
Fab 10 300 mm East Fishkill, New York, United States (2019: transferred to ON Semiconductor) 41°32′24″N 73°49′19″W / 41.540°N 73.822°W / 41.540; -73.822 (GlobalFoundries Fab 10) 90–22 nm, 14 nm

300 mm fabrication facilities[edit]

Globalfoundries Fab 1 in Dresden

Fab 1[edit]

Fab 1, located in Dresden, Germany, is a 364,512 m2 plant which was transferred to GlobalFoundries on its inception: Fab 36 and Fab 38 were renamed Module 1 and Module 2, respectively. Each module can produce 25,000 300 mm diameter wafers per month.[6][44]

Module 1 is a 300 mm wafer production facility. It is capable of manufacturing wafers at 40 nm, 28 nm BULK and 22 nm FDSOI. Module 2 was originally named "(AMD) Fab 30" and was a 200 mm fab producing 30,000 Wafer Outs Per Month, but has now been converted into a 300 mm wafer fab. Together with other clean room extensions like the Annex they have a maximum full capacity of 80,000 of 300 mm wafers/month. (180,000 200 mm wafers/month equivalent), using technologies of 45 nm and below.

In September 2016, GlobalFoundries announced Fab 1 would be refit to produce 12 nm fully depleted silicon on insulator (FDSOI) products.[45] The company expected customer's products would begin to tape out in the first half of 2019.

Fab 7[edit]

Fab 7, located in Woodlands, Singapore, is an operational 300 mm Fab, originally owned by Chartered Semiconductor. It produces wafers at 130 nm to 40 nm on bulk CMOS and SOI processes. It has a maximum full capacity of 50,000 300 mm wafers/month (112,500 200 mm wafers/month equivalent), using 130 to 40 nm technology.[6]

4/15/2021 Fab 7's target capacity will be expanded to 70–80kpcs/M.

Fab 8[edit]

Fab 8, located in Luther Forest Technology Campus, Saratoga County, New York, United States is a 300 mm fab. This fabrication plant was constructed by GF as a green field fab for advanced technologies. It is capable of manufacturing 14 nm node technology. The plant's construction began in July 2009 and the company started mass production in 2012.[6][46] It has a maximum manufacturing capacity of 60,000 of 300 mm wafers/month, or the equivalent of over 135,000 of 200 mm wafers/month. In September 2016, GlobalFoundries announced it would make a multibillion-dollar investment to refit Fab 8 to produce 7 nm FinFET parts starting in the second half of 2018.[47] The process was planned to initially use deep ultraviolet lithography, and eventually transition to extreme ultraviolet lithography.[48]

However, in August 2018, GlobalFoundries made the decision to suspend 7 nm development and planned production, citing the unaffordable costs to outfit Fab 8 for 7 nm production. GlobalFoundries held open the possibility of resuming 7 nm operations in the future if additional resources could be secured. From this decision GlobalFoundries executed a shift in company strategy to focus more effort on FD-SOI manufacturing and R&D. Fab 8 serves a crucial function to supply AMD (Advanced Micro Devices) with CPU Wafers for its Zen line of microprocessors used in the Ryzen, Threadripper and Epyc lines of CPUs. The original Zen and the Zen+ CPUs are of a monolithic design which were produced at Global Foundries Malta Facilities in Malta, NY. Going forward AMD will pursue a multiple Chiplet Design with the Zen 2 microprocessor. The Zen 2 will consist of a 14/12 nm manufactured IO die surrounded by a number of 7 nm Core dies. When Global Foundries announced the suspension of 7 nm operations AMD executed a shift in plans transferring production of the 7 nm core dies to TSMC (Taiwan Semiconductor Corporation). There was speculation in some quarters as to where manufacture of the Core Dies would take place. In AMD's 2018 4th Quarter Financial Conference call which took place on January 29, 2019 AMD CEO Lisa Su announced the WSA (Wafer Supply Agreement) governing production and acquisition by AMD from GlobalFoundries had been amended for the 7th time. The amendment stated AMD would continue to procure 12 nm node and above from Global Foundries while giving AMD latitude to purchase 7 nm node manufactured wafers from any source free from paying any royalties. The agreement will run through 2024 and ensures that Global Foundries will have work for its Malta plant for that time period. Pricing commitments for Wafers runs through 2021 when it is likely the WSA will be amended again.[49]

Fab 10[edit]

Fab 10,[50] located in East Fishkill, New York, United States, was previously known as IBM Building 323. It became part of GlobalFoundries operations with the acquisition of IBM Microelectronics. It currently manufactures technology down to the 14 nm node. In April 2019, it was announced that this fab has been sold to ON Semiconductor for $430m. The facility will be transferred over within three years.[51]

200 mm fabrication facilities[edit]

All 200 mm fabs except Fab 9 are located in Singapore, and originally owned by Chartered Semiconductor.

Fab 2[edit]

Fab 2, located in Woodlands, Singapore. This fab is capable of manufacturing wafers at 600 to 350 nm for use in selected automotive IC products, High Voltage power management IC and Mixed-signal products.

Fab 3/5[edit]

Fab 3/5, located in Woodlands, Singapore. This fab is capable of manufacturing wafers at 350 to 180 nm for use in high voltage IC's for small panel display drivers and mobile power management modules.

Fab 3E[edit]

Fab 3E, located in Tampines, Singapore. This fab produces 180 nm wafers for use in selected automotive IC products, High Voltage power management IC and Mixed-Signal products with embedded non-volatile memory technology.

In January 2019 GlobalFoundries announced that it had agreed to sell its Fab 3E in Singapore to Vanguard International Semiconductor Corporation with transfer of ownership set to be completed on December 31, 2019.

Fab 6[edit]

Fab 6 located in Woodlands, Singapore, is a copper fabrication facility that is capable of manufacturing integrated CMOS and RFCMOS products for applications such as Wi-Fi & Bluetooth devices at 180 to 110 nm processes. The facility was later converted to 300mm and merged with Fab 7, a facility for manufacturing products based on the 300 nm node.

Fab 9[edit]

Fab 9,[50] located in the village of Essex Junction, Vermont, United States, near Vermont's largest city of Burlington, became part of GlobalFoundries operations with the acquisition of IBM Microelectronics. The fab manufactures technologies down to the 90 nm node and is the largest private employer within the state of Vermont. The site also hosted a captive mask shop, with development efforts down to the 7 nanometer node, until it was sold to Toppan in 2019.[52]

Mergers and acquisitions[edit]

Merger with Chartered Semiconductor[edit]

The majority investor of GlobalFoundries, Abu Dhabi's Advanced Technology Investment Co., announced on September 6, 2009, that it has agreed to acquire Singapore-based Chartered Semiconductor Manufacturing Co. Ltd., for a total of $3.9 billion, with Chartered's operations being folded into GlobalFoundries.[53]

Chartered Semiconductor is a member of the Common Platform, IBM's semiconductor technology alliance. GlobalFoundries is a JDA partner of Common Platform Technology Alliance.

Acquisition and Sale of IBM's chip-manufacturing unit[edit]

In October 2014, GlobalFoundries received US$1.5 billion from IBM to accept taking over IBM's chip-manufacturing business unit, including a 200 mm fab (now Fab 9) in Essex Junction, Vermont, and a 300 mm fab (now Fab 10) in East Fishkill, New York. As part of the agreement, GlobalFoundries will be the sole provider of IBM's server processor chips for the next 10 years. The deal closed on July 1, 2015.[54] IBM-India employees who moved over to GlobalFoundries as part of the acquisition are now part of its Bangalore office.[55]

In April 2019 ON Semiconductor and GlobalFoundries announced a $430 million agreement to transfer ownership of GlobalFoundries 300mm Fab 10 in East Fishkill, New York, to ON Semiconductor.[56]

Process technologies[edit]

GlobalFoundries' 28 nm FD-SOI process is second-sourced from STMicroelectronics.[57] STMicroelectronics signed a sourcing and licensing agreement with Samsung for the same technology later.[58]

GlobalFoundries' 14 nm 14LPP FinFET process is second-sourced from Samsung Electronics. GlobalFoundries' 12 nm FinFET nodes are based on Samsung's 14 nm 14LPP process.[19]

Node name ITRS
node
(nm)
Date
introduced
Wafer size
(mm)
Lithography
(wavelength)
Transistor
type
Gate
pitch
(nm)
Metal 1
pitch
(nm)
SRAM
bit density
(µm2)
4S 600 1993 200 Bulk Planar
CS-24 500 1993 Bulk Planar
5L 500 200 Bulk Planar
5S 500 1994 200 Bulk Planar
SiGe 5HP 500 2001 200 Planar
SiGe 5AM 500 2001 200 Planar
SiGe 5DM 500 2002 200 Planar
SiGe 5PA 500 2002 200 Planar
5X 450 1994 200 Bulk Planar
CS-34 350 1995 Bulk Planar
SiGe 5HPE 350 2001 200 Planar
SiGe 5PAe[59] 350 2007 200 Planar
SiGe 5PAx[59] 350 2016 200 Planar
SiGe 1KW5PAe[59] 350 200 Planar
SiGe 1K5PAx[59] 350 2016 200 Planar
6S 290 1996 200 Bulk Planar
CS-44 250 1998 Bulk Dry 248nm DUV Planar
6S2 250 1997 200 Bulk Dry 248nm DUV Planar
6SF 250 200 Bulk Dry 248nm DUV Planar
6X 250 1997 200 Bulk Planar
6RF 250 2001 200 Bulk Dry 248nm DUV Planar
250SOI 250 1999 200 SOI Dry 248nm DUV Planar
SiGe 6HP 250 200 Dry 248nm DUV Planar
SiGe 6DM 250 200 Dry 248nm DUV Planar
SiGe 6WL 250 2007 200 Dry 248nm DUV Planar
7S 220 1998 200 Bulk Dry 248nm DUV Planar
220SOI 220 1999 200 SOI Dry 248nm DUV Planar
7HV 180 2010 200 Dry 248nm DUV Planar
180 BCDLite[60] 180 2011 200 Dry 248nm DUV Planar
180 UHV[60] 180 2017 200 Dry 248nm DUV Planar
7SF 180 1999 200 Bulk Dry 248nm DUV Planar
7TG 180 200 Bulk Dry 248nm DUV Planar
7RF 180 2003 200 Bulk Dry 248nm DUV Planar
8S 180 2000 200 SOI Dry 248nm DUV Planar
7RF SOI[61] 180 2007 200 RF-SOI, 300 RF-SOI Dry 248nm DUV Planar
7SW RF SOI[61] 180 2014 200 RF-SOI Dry 248nm DUV Planar
SiGe 7WL[62] 180 2003 200 Dry 248nm DUV Planar
SiGe 7HP 180 2003 200 Dry 248nm DUV Planar
130 BCDLite[60] 130 2014 300 Dry 248nm DUV Planar
130 BCD[60] 130 300 Dry 248nm DUV Planar
8SF 130 2000 200 Bulk Dry 248nm DUV Planar
8SFG 130 2003 200 Bulk, 300 Bulk Dry 248nm DUV Planar
8RF 130 2003 200 Bulk, 300 Bulk Dry 248nm DUV Planar
130G[63] 130 300 Bulk Dry 248nm DUV Planar
130LP[63] 130 300 Bulk Dry 248nm DUV Planar
130LP/EE[63] 130 300 Bulk Dry 248nm DUV Planar
110TS[63] 130 300 Bulk Dry 248nm DUV Planar
9S 130 2000 200 SOI, 300 SOI Dry 248nm DUV Planar
130RFSOI[61] 130 2015 300 RF-SOI Dry 248nm DUV Planar
8SW RF SOI[61] 130 2017 300 RF-SOI Dry 248nm DUV Planar
SiGe 8WL[62] 130 2005 200 Dry 248nm DUV Planar
SiGe 8HP[62] 130 2005 200, 300 Dry 248nm DUV Planar
SiGe 8XP[62] 130 2016 200 Dry 248nm DUV Planar
9SF 90 2004 300 Bulk Dry 193nm DUV Planar
9LP 90 2005 300 Bulk Dry 193nm DUV Planar
9RF 90 300 Bulk Dry 193nm DUV Planar
10S 90 2002 300 SOI Dry 193nm DUV Planar
90RFSOI 90 2004 300 RF-SOI Dry 193nm DUV Planar
90WG[64] 90 2018 300 Dry 193nm DUV Planar
90WG+[64] 90 ? 300 Dry 193nm DUV Planar
SiGe 9HP[62] 90 2014, 2018 200, 300 Dry 193nm DUV Planar
10SF 65 300 Bulk Dry 193nm DUV Planar
10LP 65 300 Bulk Dry 193nm DUV Planar
65LPe[65] 65 2009 300 Bulk Dry 193nm DUV Planar
65LPe-RF[65] 65 2009 300 Bulk Dry 193nm DUV Planar
10RFe 65 300 Bulk Dry 193nm DUV Planar
11S 65 2006 300 SOI Dry 193nm DUV Planar
65RFSOI 65 2008 300 RF-SOI Dry 193nm DUV Planar
55 BCDLite[65] 55 2018 300 Dry 193nm DUV Planar
55HV[66] 55 ? 300 Dry 193nm DUV Planar
55 ULP[65] 55 300 Bulk Dry 193nm DUV Planar
55LPe 55 300 Bulk Dry 193nm DUV Planar
55LPe-RF 55 300 Bulk Dry 193nm DUV Planar
55LPx[65] 55 300 Bulk Dry 193nm DUV Planar
55RF[65] 55 300 Bulk Dry 193nm DUV Planar
45LP 45 300 Bulk Wet 193nm DUV Planar
12S 45 2007 300 SOI Wet 193nm DUV Planar
45RFSOI[61] 45 2017 300 RF-SOI Wet 193nm DUV Planar
45CLO[67] 45 2021 300 Wet 193nm DUV Planar
40HV[66] 40 ? 300 Wet 193nm DUV Planar
40LP[68] 40 300 Bulk Wet 193nm DUV Planar
40LP-RF[68] 40 300 Bulk Wet 193nm DUV Planar
32LP 32 300 Bulk Wet 193nm DUV, double patterning Planar
32SHP 32 ? 300 SOI Wet 193nm DUV, double patterning Planar
13S 32 2009 300 SOI Wet 193nm DUV, double patterning Planar
28HV[66] 28 2019 300 Wet 193nm DUV, double patterning Planar
28LP 28 2009 300 Bulk Wet 193nm DUV, double patterning Planar
28SLP[69] 28 2010 300 Bulk Wet 193nm DUV, double patterning Planar
28HP 28 2010 300 Bulk Wet 193nm DUV, double patterning Planar
28HPP[69] 28 2011 300 Bulk Wet 193nm DUV, double patterning Planar
28SHP 28 2013 300 Bulk Wet 193nm DUV, double patterning Planar
28SLP RF 28 2015 300 Bulk Wet 193nm DUV, double patterning Planar
28FDSOI[57][58] 28 2012 300 FD-SOI Wet 193nm DUV Planar
22FDX-ULP[70] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar
22FDX-UHP[70] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar
22FDX-ULL[70] 22 2015 300 FD-SOI Wet 193nm DUV, double patterning Planar
22FDX-RFA[70] 22 2017 300 FD-SOI Wet 193nm DUV, double patterning Planar
22FDX RF+[71] 22 2021 300 FD-SOI Wet 193nm DUV, double patterning Planar
14LPP[72] 14 2015 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET) 78 64 0.09
14HP[73] 14 2017 300 SOI Wet 193nm DUV, double patterning 3D (FinFET)
12LP[74] 12 2018 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET)
12LP+[75] 12 2019 300 Bulk Wet 193nm DUV, double patterning 3D (FinFET)

Number of processes currently listed here: 102

See also[edit]

References[edit]

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External links[edit]


Coordinates: 37°24′55″N 121°58′28″W / 37.415293°N 121.974448°W / 37.415293; -121.974448