Igor Serafimovich Tashlykov
Igor Serafimovich Tashlykov
|Died||June 7, 2016 (aged 70)|
|Citizenship||USSR, Republic of Belarus|
|Alma mater||Belarusian State University named after V.I. Lenin|
|Known for||Research in the field of radiation material science|
|Spouse(s)||Inessa Dmitrievna Tashlykova (Pakhomova) (1946)|
|Children||Iya Igorevna Tashlykova-Bushkevich (Tashlykova) (1975)|
|Fields||condensed matter physics, radiation effects in matter, ion implantation in solids|
|Institutions||Belarusian State University named after V.I. Lenin, A.N. Savchenko Scientific Research Institute of Applied Physical Problems of Belarusian State University, Belarusian Technological University, Maxim Tank Belarusian State Pedagogical University|
|Doctoral advisors||G.A. Humansky, V.I. Prokoshin|
Igor Serafimovich Tashlykov (June 4, 1946 - June 7, 2016) was a USSR and Belarusian physicist, Doctor of Science (1989), Professor (1992), member of the New York Academy of Sciences (1994), and Belarusian Physical Society (1995). Places of work, positions: Research Institute of Applied Physical Problems (APP) of Belarusian State University (1972-1989, senior researcher), Belarusian State Technological University (1989-2003, professor), Maxim Tank Belarusian State Pedagogical University (BSPU) (2003-2007 - Dean of the Faculty of Physics, 2007-2013 - Head of the Department of General Physics, from 2013 - Professor of the Department of Physics and Methods of Teaching Physics).
I.S. Tashlykov was a well-known scientist in Belarus, Russia and abroad in the field of surface modification of solids using ion-beam technologies. He made a significant contribution to the development of solid-state electronics by developing criteria for controlling the transformation of the structure of ion-implanted gallium arsenide, silicon, based on the calculations of the energy density released in the elastic processes of cascade collisions of atomic nuclei. Tashlykov also developed methods for the modification of solids by atomic mixing and ion-assisted deposition of coatings. Experimental studies are generalized in the developed by him theory of ion-assisted deposition of thin films.
He was a holder of the scholarship of the President of the Republic of Belarus for outstanding contribution to the social and economic development of the Republic (2012), a holder of the grant of the President of the Republic of Belarus (2015), a holder of 3 grants of the German Academic Exchange Service (DAAD, 1991-1992, 1996, 2002), a holder of 2 grants of the Royal Society of Great Britain (1984, 1996), a grant holder from UNESCO (Germany, 1985), as well as one-year internships in the GDR (1971-1972) and Canada (1979-1980). He underwent traineeships in Friedrich Schiller University Jena (1971-1972, GDR), McMaster University (1979-1980, Canada). He performed scientific work in the Institute named after M. Planck on plasma-physics in Garching near Munich and nuclear physics in Heidelberg (1985, FRG, UNESCO grant). On grants from the German Academic Exchange Service (DAAD) he conducted research in Heidelberg university named after Carlos-Ruprecht (1991-1992, 1996) and Jena university named after F. Schiller (2002), and he worked at Salford University (1984, 1996) on grants from the Royal Society of Great Britain.
The founder of the scientific school in the field of "Physics of functional coatings" on the study of physical characteristics and properties of the surface of materials (metals, semiconductors, elastomers). The author of more than 400 scientific works, including 3 monographs published in the Republic of Belarus and the United States, 13 copyright certificates and patents. He was awarded with Honorary Diplomas of the A.N. Sevchenko Scientific Research Institute of Applied Physical Problems of Belarusian State University (1975, 1977, 1978, 1980, 1981, 1984, 1987), Belarusian State University (1981, 1983), Belarusian State Technological University (2000), the Ministry of Education of the Republic of Belarus (1982, 2005, 2012) Maxim Tank Belarusian State Pedagogical University (2006, 2009, 2016), a sign of the Ministry of Education "Excellent Worker of Education" (2014), a grant from the President of the Republic of Belarus (2015), an honorary certificate of the State Committee for Science and Technology of the Republic of Belarus (2016).
He was born in the DPRK (North Korea) in a family of military personnel. His father, Serafim Dmitrievich Tashlykov (1915, Kizilyurt, Dagestan - 1989, Minsk, Belarus) was a pilot, colonel, participant of the Great Patriotic War (WWII), mother, Nina Semenovna Tashlykova (born Shalygina) (1918, Krasnoyarsk Region - 1976, Minsk, Belarus) was a nurse, a participant of the Great Patriotic War. Since 1952 he had lived in Babruysk. He moved to Minsk with his parents in 1962. He finished secondary school No. 27 in Minsk in 1964 with a silver medal and entered the Physics Faculty of Belarusian State University (BSU). Since that time his life had been connected with the BSU for 25 years. In 1969, he graduated with honors from the Physics Faculty with a specialization in solid state physics and entered full-time postgraduate study at the Department of Solid State Physics. In 1970, he transferred to correspondence postgraduate study and worked as a junior researcher in the laboratory of experimental physics and physical electronics of the BSU. In 1971, he was transferred to the position of junior researcher in the laboratory of elionics of the Research Institute of Applied Physical Problems (APP) of BSU. From 1972 to 1989 he was Senior Researcher of the Laboratory of Elionics of the Research Institute of APP of BSU. In 1973, he was awarded the scientific degree of Candidate of Physical and Mathematical Sciences on the results of his thesis defense on the topic "Investigation of radiation effects in bismuth and its alloys" at the BSU (September 25, 1973). In 1976, he was awarded the title of Senior Research Fellow with speciality "Solid State Physics". Doctoral thesis in physics and mathematics on the subject "Modification and study of structure in crystals with different types of bonds (Si, GaAs, Ni) by nuclear physical methods" was defended in the Kharkov State University on March 17, 1989.
After defending his doctoral thesis in 1989, he was invited to work as a professor at the Department of Physics at the Belarusian Institute of Technology, later renamed into the Belarusian Technological University, where he had been working for 14 years, till 2003. He was awarded the academic title of Professor in the Department of Physics in 1992.
In 2003, at the invitation of the rector of the Maxim Tank Belarusian State Pedagogical University named (BSPU), Kukharchik Petr Dmitrievich, he went to work as the Dean of the Physical Faculty at the BSPU. Since 2007 he had been Head of the Department of Experimental Physics, from 2013 to 2016 - Professor of the Department of Physics and Methods of Teaching Physics of the BSPU named after M. Tank.
Generally, research work of Igor S. Tashlykov was focused on the modification of the structure and properties of solids using ion-beam and ion-plasma methods and technologies, including the study of physical and chemical processes occurring during the interaction of accelerated ions with elastomers, as well as the formation of thin film (coating) / substrate systems. Scientific interests: radiation physics of solids; ion-beam modification of the surface properties of metals, semiconductors, elastomers; nuclear physical methods of research of elemental composition; applications of nuclear physical methods for modifying the properties of materials; scanning probe microscopy; properties and mechanisms of wetting the surface; thin films of electrical contacts and absorbing layers of solar cells and elements of optoelectronics.
Tashlykov began his scientific work on the study of radiation defects in bismuth and its alloys in postgraduate course in 1969 under the guidance of Associate Professors Georgy Alexandrovich Humansky and Valery Ivanovich Prokoshin. Since the sources of radiation exposure in Belarus were not available in those years (the linear electron accelerator was used only for medicine in the oncology center) or not applicable (neutrons in the reactor channel were lost at elevated temperature), then with the help of the management of the Belarusian State University an agreement was reached to irradiate samples at the Physical Institute of Academy of Sciences (PIAS) of the USSR and the Institute for Nuclear Research of the Academy of Sciences of the Ukrainian SSR. Experiments on electron irradiation of bismuth alloys were carried out on a microtron in the laboratory of Academician P.A. Cherenkov (PIAS USSR), and on proton irradiation - in Kiev, on a U-120 cyclotron in the laboratory of the director of the Institute of Academician of the Academy of Sciences of Ukraine M.V. Pasechnik (Institute for Nuclear Research, Academy of Sciences of the Ukrainian SSR). As a result of successful work Tashlykov was recommended for a one-year internship at the Department of Ionometry of Jena University named after F. Schiller (GDR, 1971-1972). The latter largely determined his scientific interests. New methods for studying structure and composition were mastered: protonography and ionometry, later called spectroscopy of Rutherford backscattering (RBS) ions in combination with their channeling. At the general seminar in Moscow under the guidance of Professor O. B. Firsov it was noted that Tashlykov was the first among Soviet scientists who held the years experiments in 1971-1972 using ion channeling for layer-by-layer analysis of radiation damages in single crystals.
The obtained results were the basis for development, together with the scientist from the Research Institute of Nuclear Physics of Moscow State University, M.A. Kumakhov, of the original method of calculating the concentration of radiation defects in irradiated single crystals, using the method of ionometry, taking into account the multiple scattering of channeled helium ions. This work was discussed at seminars at the PIAS and the Research Institute of Nuclear Physics of Moscow State University and was published in the articles in the journal “Reports of the USSR Academy of Sciences, 217 (1974) 1277-1280” on the recommendation of Academician P.A. Cherenkov and the journal “Reports of the Academy of Sciences of the BSSR, XVII (1973) 797-800” on the recommendation of Academician of AS BSSR A.N. Sevchenko. On September 25, 1973 Tashlykov defended his Ph.D. thesis on "The study of radiation effects in bismuth and its alloys" in the BSU.
Work at the A.N. Sevchenko Scientific Research Institute of APP of Belarusian State University
As a scientist, I.S. Tashlykov grew up in the A.N. Sevchenko Scientific Research Institute of APP of BSU. Carrying out the study of radiation disturbances in bismuth and its alloys by nuclear physical methods, Tashlykov initiated the creation of a research complex of nuclear physical methods on the basis of the ESU-2 electrostatic accelerator of horizontal type in the Belarusian State University in 1975-1979. This legendary accelerator number 2, built shortly after the Great Patriotic war in the laboratories of Kharkov Institute of Physics and Technology, was used in the 60s and 70s as an electron accelerator at PIAS in the sector of Professor V.S. Vavilov. With the assistance of the director of the Research Institute of the APP, Academician of the Academy of Sciences of Belarus, A.N. Sevchenko, head of the semiconductor laboratory Academician B.M. Vul passed this accelerator to Belarus.
Organization of a new research center based on ESU-2, the reconstruction of the accelerator (the creation of a high-frequency ion source and its control systems), the logistic support (transmission of a target chamber equipped with a two-axis precision goniometer) of the elionics laboratory was greatly assisted by well-known specialists: L.I. Pivovar (KPTI), G.M. Osetinsky and I.A. Chepurchenko from the Joint Institute for Nuclear Research (Dubna), as well as Tashlykov's colleague and friend Dr. Hardwig Treff of the University of Jena (Friedrich Schiller Jena University, Jena, GDR).
From the beginning of the 70s research work began in the BSU under the guidance of Associate Professor G.A. Gumansky on the tasks of the State Committee on Science and Technology of the Council of Ministers of the USSR in a new direction associated with ion-beam synthesis of double and triple connections of optoelectronics materials. The importance and relevance of the research in this direction has led to active international cooperation. In 1971-1972, 1973, 1975, 1977 Tashlykov repeatedly carried out research at the University of Jena (Friedrich Schiller Jena University, Jena, GDR), at the invitation of the heads of the ionometric department Gustav Schirmer and Gerhard Goetz.
In 1977, at the International Conference on Atomic Collisions in Solids (ICACS) at the Moscow State University, organized by Professor A.F. Tulin, Tashlykov became acquainted with Professor John A. Davies from the Chalk River Nuclear Laboratories, known as one of the fathers of ion implantation, and Professor George Carter of Salford University (Salford University, Manchester, UK), a famous theoretician in the field of ion implantation.
At the invitation of Professor John A. Davis in 1979-1980 Tashlykov underwent traineeship at the McMaster University (McMaster University, Hamilton, Canada) and in the Chalk River Nuclear Laboratories in Canada. Defect formation in gallium arsenide was studied during implantation of N, Al, P, As, and Sb ions under conditions of controlled energy density released in cascades of atomic collisions at temperatures from 40 K to several hundred degrees Celsius with ion current density from hundredths to units of μA / cm2. Using the Rutherford backscattering (RBS), the distribution profiles of the implanted As, Sb were established using the 27Al (p,γ)28Si resonance nuclear reaction of aluminum profiles in gallium arsenide. These results, as well as the results of studies of the modification of the catalytic properties of nickel electrodes for water alkaline electrolysis for the production of hydrogen, formed the basis for a doctoral dissertation. New knowledge was obtained about the mechanisms of formation of radiation damage and phase reconstruction of the structure in gallium arsenide under ion irradiation, the influence of ion current density on these processes, the energy density released in the cascade of atomic collisions, the type of ions, and the irradiation temperature.
The results of the studies in Canada of ion implantation into electrodes used in alkali electrolysis for the production of hydrogen and oxygen were reported by Tashlykov at the Institute of Atomic Energy named after I.V. Kurchatov. With the support of the Deputy Director of the Institute, the head of the All-Union Hydrogen Program, Academician V.A. Legasov, State Committee for Science and Technology of the Council of Ministers of the USSR provided financing in the early 80s for the beginning of planned research in the USSR on the topic "Development of technical regulations for ion implantation of metal catalysts and other ions in order to create corrosion-resistant electrodes used in the electrolysis of water." This work was an important stage in the scientific career of Tashlykov. Five copyright certificates were obtained from the found technical solutions for creating active and corrosion-resistant electrodes.
Active scientific research was accompanied by organizational work. Tashlykov was appointed to the Coordination Group (head was Professor A.F.Tulinov, USSR State Prize Laureate) on the methods of fast nuclear analysis of the Council of the USSR Academy of Sciences (later RAS) on the application of methods of nuclear physics in related fields and to the Coordination Group of Electrostatic Accelerators in the Council of the Academy of Sciences of the USSR (Section of accelerators of direct action and sources of charged particles) headed by V.A.Romanov (Obninsk Institute of Physics and Power Engineering). At the invitation of Academician S.T. Belyaev he consulted the method of spectroscopy of Rutherford backscattering and ion channeling in the Department of Nuclear Physics of the Institute of Atomic Energy in 1987-1988. The same method was introduced in 1986 at the company PO box R-6710, Leningrad. The developed regulations for ion-beam synthesis and doping of semiconductor crystals were introduced at the enterprises of the Ministry of Electronics Industry (in 1987, PO Box A-1067, Fryazino, and PO Box A-1561, Novgorod) and the USSR radio industry (1988, PO Box B-8574, Kaunas) with the economic effect of over 640 thousand soviet rubles. The regulations for the creation of anodes of catalytically active and corrosion-resistant anodes for water-alkali electrolysis by the implantation of Ag+ ions into Ni, the use of which provides for a 10% reduction in energy costs per unit of production, were transferred to the organizations of Ministry of Chemical Industry and the USSR Academy of Sciences. The economic effect amounted to 180 thousand soviet rubles. The invaluable assistance was rendered during this period of research using nuclear-physical methods by the head of the Accelerators Laboratory of the Research Institute of Nuclear Physics of Moscow State University, candidate of physical and mathematical sciences, Laureate of the State Prize of the USSR V.S. Kulikauskas.
In 1982, he led the organization and conduct of the All-Union Seminar on Methods of Instant Nuclear Analysis at the A.N. Sevchenko Scientific Research Institute of the APP of BSU. In 1985 and 1987, he was a scientific secretary of the All-Union schools conducted at the Belarusian State University on ion implantation and emission of channeled ions. In June 1985, Tashlykov organized an invitation of Professor John A. Davis, who delivered lectures in the BSU for Belarusian scientists and microelectronics specialists. In Moscow, John A. Davis met with Professor L.I. Ivanov from the Institute of Metallurgy named after A.A. Baikov, who was the leader of the USSR part of the project "Soyuz-Apollo". Later L.I. Ivanov, being the deputy editor of the scientific journal "Physics and Chemistry of Material Processing", invited Tashlykov to join the Editorial Board of this journal, where he had worked till 2016
Invited by Professor George Carter within the framework of scientific and technical exchange between the UK and the USSR, Tashlykov continued study the mechanisms of defect formation in semiconductors and metals under ion irradiation in the University of Salford (UK) in 1984. At the same time, together with Professor John S. Colligon he conducted experiments to study the effect of the energy density released in the cascade of atomic collisions on the processes of ion-assisted deposition of coatings on materials. In 1985, during a UNESCO trip to the Federal Republic of Germany (FRG), the studies, started in Belarus and the UK, were continued in collaboration with scientists from Germany at the Heidelberg University named after Carlos-Ruprecht in the group of Professor Gerhard K. Wolf and the Institute of Nuclear Physics named after M. Planck (Max-Planck-Institut für Kernphysik) in the group of Professor Siegfried Kalbitzer.
The second half of the 80s was devoted to the organizational work on the acquisition, installation and launch at the Research Institute of the APP of a new ESU-2.5 produced by firm “High Voltage Engineering”, summarizing the scientific results for co-authorship with F.F. Komarov and M.A. Kumakhov in monograph «Nerazrushajushhij analiz poverhnostej tverdyh tel ionnymi puchkami (Неразрушающий анализ поверхностей твердых тел ионными пучками)» (Minsk, University Press, 1987, 256 p), later translated and then published in 1990 in English by the American publishing house Gordon and Breach, entitled "Nondestructive Ion Beam Analysis of Surfaces". At the same time, a doctoral thesis was written on "Modifying and studying the structure by nuclear physical methods in crystals with different types of chemical bonds (Si, GaAs, Ni) ", defended in Kharkov State University on March 17, 1989.
Work at the Belarusian State Technological University
After starting teaching at the BSTU in August 1989, Tashlykov began research in a new scientific direction on the study of physical processes in the ion-assisted coating of materials and products in conditions of self-radiation. Research of the coatings based on metals (Ti, Cr, Mo, W, etc.) on silicon, graphite, steel, aluminum and its alloys, elastomers, with simultaneous irradiation of ions of the same metals was carried out with controlling the energy density released in the cascade of atomic collisions. Mechanisms of damage and interpenetration of components in the area of coating / substrate phase separation induced by radiation was established, strength, corrosion, adhesion, friction characteristics of materials modified by coating were studied. Patents of the Russian Federation (1994, 1995) and the Republic of Belarus (1996, 1998) have been received. Using the patented method, in frames of SSTP "New materials and surface protection" he introduced the new technology at the enterprises of the Republic of Belarus (Baranovichi Automobile Aggregate Plant, OJSC Belarusrezinotechnika, Babruysk), which resulted in creation of corrosion-resistant, inertial to the elastomer adhesion mold surface for manufacturing of rubber products. Developing methods for modifying the surface of solids by atomic mixing and ion-assisted deposition of coatings, Tashlykov continued his cooperation with scientists from Heidelberg, Jena Universities, Germany, Salford University, the United Kingdom, and Institute of Nuclear Physics named after M.Planck on grants from the German Academic Exchange Service (DAAD, 1991-1992, 1996, 2002) and the Royal Society (1996). Scientific results on the new topic were reported at the International Conference "Interaction of Radiations with a Solid Body" (Minsk), annually at the International Conferences "Physics of Interaction of Charged Particles with Crystals" (Moscow), and also abroad: "Ion Beam Modification of Materials" (Heidelberg , 1992, Germany), Plasma Surface Engineering (Garmisch Partenkirchen, 1994, 1996, 1998, Germany), "On Adhesion and Surface Аnаlуsis" (Loughborough, 1996, Great Britain), International Symposium "Materials Science Applications of Ion Beams Technique" "(Seeheim, 1996, Germany),"Surface Modification of Metals by Ion Beams"(Marburg, 2001, Germany).
Contribution to the development of the Faculty of Physics of the BSPU named after M. Tank
In the Belarusian State Pedagogical University he was Dean of the Faculty of Physics of (2003-2007), Head of the Department of General Physics (2007-2013), Professor of the Department of Physics and Methods of Teaching Physics (2013-2016). After the invitation by the rector of the Maxim Tank Belarusian State Pedagogical University (BSPU) P.D. Kukharchik in 2003 to accept post of dean of the Faculty of Physics Igor S. Tashlykov created scientific and pedagogical school of the physics of functional coatings. In 2004, he opened a scientific laboratory for studying the surface of solids, equipped with modern research equipment (including the atomic-force microscope NT-206, as well as the device of precise measurement of the contact angle of wetting). This original device for studying the wettability of the surface of products was created according to the design of a similar device at the Institute of Interphase Engineering and Biotechnology named after J. Fraunhofer, on which Tashlykov carried out his research in 2002 in Stuttgart, Germany. The installation received 2 patents of the Republic of Belarus for the utility model.
In the 2000s, scientific and technical cooperation began with the scientific group of Professor P.V. Zhukovsky in Lublin Technical University, which led to fruitful joint research. The results were reported at the series of following International Conferences held in Poland: "New Electrical and Electronic Technologies and their Industrial Implementations" and "Ion Implantation and other Applications of Ions and Electrons".
On the basis of the laboratory created by Igor S. Tashlykov scientific research was carried out within the framework of the State programs of scientific research, projects of the Belarusian Republican Foundation for Fundamental Research and Ministry of Education of the Republic of Belarus. As Dean of the Faculty of Physics, Tashlykov initiated the opening of a new specialty "Physics. Technical creativity" in 2005. In 2012, he had a personal allowance of the President of the Republic of Belarus for his outstanding contribution to the social and economic development of the Republic. In 2015, he received and implemented a grant the President of the Republic of Belarus to develop information technologies in technical creativity.
In the studies, carried out under the leadership of Igor S. Tashlykov from 2012 on innovative projects of State programs of scientific research on the creation of new types of cheap and environmentally friendly thin-film absorbing layers and current-carrying contacts for solar cells, it was shown for the first time that application of “hot wall” technique for obtaining thin films of SnPbS system compounds with different elemental composition significantly changes the structural and the morphological characteristics of the films and improves their physical properties. The identification of a number of mechanisms of mass transfer in thin metal film / silicon substrate systems, formed by physical vacuum deposition under conditions of hyper-high-speed crystallization, has been performed. The mechanisms of diffusion and mass transfer in the film / substrate structure were established depending on the energy density released in cascades of atomic collisions and the integral flux of xenon ions irradiating the substrate. Under his leadership, a phenomenological model of the surface wettability of nanosized films with distilled water has been developed as an effective method for studying the characteristics of surfaces and the processes occurring on them.
Main scientific results
He was the first Soviet scientist who used the channeling effect to study radiation defects in ion-implanted crystals. Based on the solution of the analytical equation, he developed a method for constructing profiles of radiation defects in crystals, which takes into account de-channeling of analyzing ions not only on defects, but also on thermal vibrations of atoms and their electrons.
- The fundamentals of the technology of ion-beam synthesis of layers of solid solutions based on single- and multi-component systems of materials of solid-state electronics: silicon, silicon carbide (SiC), and ternary compounds based on gallium arsenide (AlxGa1-xAs, GaAs1-xPx) have been developed.
- Mechanisms of defect formation (homogeneous, heterogeneous) and structural-phase rearrangements in semiconductor crystals during ion implantation have been established.
- The following criteria were experimentally determined: the density of the released energy in cascades of atomic collisions, the ion current density, the ion energy values, the temperature implantation and annealing modes affecting the concentration, depth distribution, type of radiation defects in the near-surface layers of ion implanted semiconductors.
- The developed regulations for ion-beam synthesis and doping of semiconductor crystals have been introduced at the enterprises of the Ministry of Electronics (1987, PO box A-1067, A-1561) and radio industry of the USSR (1988, PO box B-8574) with an economic effect from above 640 thousand soviet rubles.
- The only complex in Belarus of nuclear physical methods for studying of solids was created with F.F. Komarov in the Research Institute of the APP BSU.
- The scientific and technical materials "Application of ion beams for the analysis of solids" have been developed and implemented at the enterprises of the Ministry of Medium Engineering (1986, Institute of Atomic Energy named after I. Kurchatov, PO box P-6710) with an economic effect of over 40 thousand soviet rubles.
- The complex of studies on ion-beam modification of electrode materials (Ni, Ti, graphite) used for the electrolysis of alkaline, acidic and other solutions was carried out according to the task of the State Committee for Science and Technology of the Council of Ministers of the USSR. The regulations for the creation by implantation of Ag+ ions in Ni of catalytically active and corrosion-resistant anodes for water-alkaline electrolysis of water were developed and handed over to the Ministry of Chemical Industry and the USSR Academy of Sciences organizations, the application of which provided a 10% reduction in electricity costs per unit of output. The economic effect was 180 thousand rubles.
- Fundamental results have been obtained on the mechanisms and dynamics of radiation defect formation in metal crystals during ion implantation, and a model for oxidizing the anode surface in aqueous alkaline electrolysis has been constructed.
- A theory of ion-assisted protective coatings of rubber has been developed, which takes into account the capture of auxiliary gas atoms, surface spraying, the density of ionized and deposited neutral fractions generated by the ion source.
- The "Method of deposition of coatings" has been experimentally proved and patented. Using this method, the new technology of ion-assisted deposition of coatings has been developed and introduced at the enterprises of Belarus (Baranovichi Automobile Units Plant, Belavtomaz Production Association (2001), JSC Belorussian Rubber Plant (2000) assisted coating application in self-irradiation conditions on cuffs for use in the rear axle assemblies of GAZ-3102, GAZ-3110 cars and MAZ car dampers. The economic effect in 2000 amounted to 1,015,000 thousand belarusian rubles.
- Technological regimes for the formation of superhard nanosized films on silicon substrates for functional elements of nano- and microelectronics have been developed. The studied radiation-controlled processes of mass transfer during the deposition of thin films allow controlling adhesion at the atomic level, as well as modifying the surface properties of the absorbing layers and back contacts for solar cells.
- A vacuum method for the production of chalcogenide semiconductors Pb1-xSnx (S, Te) has been developed, and regularities have been established for the variation of their electro-physical and optical properties and structural characteristics, depending on the composition and processing conditions of production, the practical applications of these materials in the field of optoelectronics as thin-film solar cells and photo converters, have been determined.
Tashlykov paid much attention to the training of scientific and pedagogical specialists, forming their interest in science from the student years. The monograph "Non-destructive Analysis of Solids Surfaces by Ion Beams", published in the “Universitetskoye” publishing house, is used as a textbook for reading special courses at the Departments of Semiconductor Physics and Solid State Physics at the BSU. The developed method of resonance nuclear reactions for layer analysis of light impurities was used in a laboratory workshop on the "Backscattering method and nuclear reactions in elemental analysis of substance" for the training of students at the Kharkiv State University, as well as in similar works at the D.V. Scobeltsyn Research Institute of Nuclear Physics of Moscow State University, at the Research Institute of Physics of Rostov State University. A student research laboratory "PHYSMATING" fruitfully worked under his scientific guidance at the Physics and Mathematics Faculty of the BSPU named after M. Tank. Five candidates of sciences have been trained. Igor S. Tashlykov supervised the Problem Council on physical sciences at the Faculty of Physics and Mathematics, was chairman of the Council for the Defense of Doctoral dissertations D 02.21.01 at the BSPU (since 2011), a member of the Council for the Defense of Doctoral dissertations D 02.01.10 at the BSU.
Membership in scientific and public organizations
In the 1980s, he was a member of two coordination groups of the Councils of the USSR Academy of Sciences on direct-action accelerators and on methods of rapid nuclear analysis. Member of the New York Academy of Sciences (since 1994). Member of the Belarusian Physical Society (since 1995).
Awards and honors
- Certificates of honor (Honorable Diplomas) of the Research Institute of Applied Physical Problems of BSU / Почетные грамоты НИИ прикладных физических проблем БГУ (1975, 1977, 1978, 1980, 1981, 1984, 1987).
- Certificates of honor of Belarusian state University / Почетные грамоты Белорусского государственного университета (1981, 1983).
- Honorable Diplomas of the Ministry of Education of the Republic of Belarus / Почетные грамоты Министерства образования Республики Беларусь (1982, 2005, 2012).
- Honorable Diplomas of the Belarusian State Pedagogical University named after M.Tank / Почетные грамоты Белорусского государственного педагогического университета им. М. Танка (2006, 2009, 2016).
- Personal premium from President of the Republic of Belarus / Персональная надбавка Президента Республики Беларусь (2012).
- Badge of the Ministry of Education "Excellence in Education" / Знак Министерства образования «Отличник образования» (2014).
- Grant of President of the Republic of Belarus for the development of information technologies in technical creative work / Грант Президента Республики Беларусь на разработку информационных технологий в техническом творчестве (2015).
- Diploma of the State Committee on science and technology of the Republic of Belarus / Почетная грамота Государственного комитета по науке и технологиям Республики Беларусь (2016).
The biography is included in the reference books of Marquis of “Who is who in the world” biographies of scientists who made a significant contribution to the development of world science and civilization.
- Ф.Ф.Комаров, М.А.Кумахов, И.С.Ташлыков. "Неразрушающий анализ поверхностей твердых тел ионными пучками". Мн., изд-во Университетское (1987) 256.
- F.F. Komarov, M.A. Kumakhov, I.S. Tashlykov. "Non-destructive ion beam analysis of surface". London: Gordon and Breach Science Publishers (1990) 231.
- И.С. Ташлыков. "Дефектообразование в арсениде галлия при имплантации ионов фосфора". Физика и техника полупроводников, 14 (1980) 2146-2151.
- I.S. Tashlykov. "Backscattering measurements of P+ implanted GaAs crystals". Nucl. Instrum. Methods, 170 (1980) 403-406.
- I.S. Tashlykov. "Disorder dependence of ion implanted GaAs on the type of ion". Nucl. Instrum. Methods. Phys. Res., 203 (1982) 523-526.
- Д. Дэвис, И.C. Ташлыков, Д.А. Томпсон. "Различия в радиационном повреждении GaAs при имплантации ионов Р и Al". Физика и техника полупроводников, 16 (1982) 577-581.
- И.С. Ташлыков. "Изучение типов радиационных нарушений в имплантированном алюминием арсениде галлия". Поверхность. Физика, химия и механика, 8 (1984) 77-84.
- G. Carter, M.J. Nobes, I.S. Tashlykov. "The influence of dose rate and analysis of procedures on measured damage in P+ ion implanted GaAs". Rad. Effects Letters, 85 (1984) 37-43.
- I.S. Tashlykov, O.A. Slesarenko. J.S. Colligon, H. Kheyrandish. "Effect of atomic mixing on the electrochemical and corrosion properties of Ni-Ti surfaces". Surfacing Journal International, 1 (1986) 106-107.
- И.С. Ташлыков, Т.В. Поздеева, З. Кальбитцер. "О роли природы примеси в повреждении GaAs, имплантированном ионами Al+ и P+". Физ. и техн. полупроводников, 21 (1987) 728-729.
- И.С. Ташлыков. '"Воздействие пучков анализирующих ионов гелия на структуру кристаллов арсенида галлия". Поверхность. Физика, химия, механика,' Т. 9. №3 (1985) 81-83.
- И.С. Ташлыков, Г. Картер, М. Нобс. "Повреждение GaAs при имплантации Al+ и P+ с различной плотностью ионного тока". Физ. и техн. полупроводников, Т. 20. №5 (1988) 785-788.
- И.С. Ташлыков. "Ионное перемешивание бикомпонентных слоев на основе никеля". ФизХОМ, 1 (1991) 39-43.
- И.С. Ташлыков, З. Аль-Тамими. "Ионно-лучевое воздействие серебра на структуру никеля". Поверхность. Физика, химия, механика, 7 (1991) 145-152.
- I.S. Tashlykov, I.M. Belyi, O.G. Bobrovich, S. Kalbitzer, O. Meyer, G. Wolf, B. Enders. "On the efficiency of deposited energy density for ion beam mixing processes with ions implanted during and after thin metal film deposition". Nucl. Instrum. Methods Phys. Res., B 80/81 (1993) 98-101.
- G. Carter, J. Colligon, I.S. Tashlykov. "Evaluation of Coatings Produced by Low-Energy Ion Assisted Deposition of Co on Silicon". Material Science Forum, 248-249 (1997) 357-360.
- I.S. Tashlykov. "A model of oxide layer growth on Ag+ and Pt+ ion implanted nickel anode in aqueous alkaline solution". Thin Solid Films, 307 (1997) 106-109.
- I.S. Tashlykov, V.I. Kasperovich, M.G. Shadrukhin, A.V. Kasperovich, G.K. Wolf, W. Wesch. "Elastomer treatment by arc metal deposition assisted with self-ion irradiation". Surf. Coat. Technol., 116-119 (1999) 848-852.
- Г.Картер, Дж.Коллигон, И.С.Ташлыков. "Простая теория и экспериментальное исследование ионно-ассистированного нанесения покрытий кобальта на кремний". Перспективные материалы, 1 (1999) 5-10.
- I.S. Tashlykov, A.V. Kasperovich, G. Wolf. "Elastomer surface modification by means of SIAD of metal-based layers". Surf. Coat. Technol., 158-159 (2002) 498-502.
- I.S.Tashlykov, O.G.Bobrovich. "Radiation damage of Si wafers modified by means of thin layer ion assisted deposition". Vacuum, 78 (2005) 337-340.
- И.С. Ташлыков, М.А. Андреев. "Механизмы взаимопроникновения компонентов в композиции подложка-тонкая пленка, формируемой при ионно-ассистированном осаждении покрытия". ФизХОМ, 3 (2006) 29-32.
- I.S.Tashlykov, P.V.Zukowski, S.M.Baraishuk, O.M.Mikhalkovich. "Analysis of the composition of Ti-based thin films deposited on silicon by means of self-ion assisted deposition". Radiat. Eff. Defects Solids, 162 (2007) 637-641.
- I.S.Tashlykov, A.I.Turavetz, V.F.Gremenok, K.Bente, D.M.Unuchak. "Topography and water wettability of HWVD produced (Pb, Sn)S2 thin films for solar cells". Przeglad Elektrotechniczny, 7 (2010) 118-121.
- I.S. Tashlykov, A.I. Turavets, V.F. Gremenok, P. Zukowski. "The elemental composition, topography and wettability of Pb0.25Sn1.75S2 thin films". Przeglad Elektrotechniczny, 89 (2013) 285-287.
- I.S. Tashlykov, A.I. Turavets, V.F. Gremenok, P. Żhukowski. "Elemental composition, topography and wettability of PbxSn1-xS thin films". Acta Physica Polonica A, 125 (2014) 1339-1343.
- I.Tashlykov, P. Zhukowski, O. Mikhalkovich, S. Baraishuk. "Surface properties of Me/Si structures prepared by means of self-ion assisted deposition". Acta Physica Polonica A, 125 (2014) 1306-1308.
- П.В. Коваль, А.С. Опанасюк, А.І. Туровець, І.С. Ташликов, А.Г. Понамарьов, П. Жуковскі. "Структура і елементний склад плівок Pb1-xSnxS". Журнал нано- и электронной физики, Т. 7, № 2 (2015) 02013-1-02013-7.
- О.Г. Бобрович, И.С. Ташлыков. "Формирование покрытия на кремнии Cr в условиях ионного ассистирования". Труды БГТУ , 6 (2016) 91-95.
- И.И. Ташлыкова-Бушкевич, Ю.С. Яковенко, В.Г. Шепелевич, И.С. Ташлыков. "Влияние состава и микрорельефа на смачивающие свойства поверхности фольг сплавов Al-In, полученных высокоскоростной кристаллизацией". ФизХОМ, 3 (2016) 65-72.
- Ф.Ф.Комаров, М.А.Кумахов, И.С.Ташлыков. Неразрушающий анализ поверхностей твердых тел ионными пучками. Мн., изд-во Университетское,1987, 256 с.
- Сводный электронный каталог библиотек Беларуси [Электрон. ресурс]
- Ташлыкоў Ігар Серафімавіч / Я. Г. Міляшкевіч // Беларуская энцыклапедыя : 18 т. — Мінск, 2002. — Т. 15. — С. 466.
- Ташлыков Игорь Серафимович // Республика Беларусь : энциклопедия : [в 7 т.]. — Минск, 2008. — Т. 7. — С. 189—190.
- Remembering Dr. John A. Davies // McMaster University [Электрон. ресурс]
- Памяти ученого Льва Ивановича Иванова / Вопросы атомной науки и техники. Серия Термоядерный синтез. 2012. №2. с.139-140.
- Памяти профессора Ташлыкова Игоря Серафимовича / Физика и химия обработки материалов. 2016. №6. с.96.
- Научно-педагогические школы БГПУ / редкол. : А. В. Торхова и др. ; под ред. А. В. Торховой. – Минск : БГПУ , 2015. – С. 118—136.
“BSPU rectorate expresses its deepest condolences” - on the official website of Belarusian State Pedagogical University (in Russian) / Ректорат БГПУ выражает глубокие соболезнования на официальном сайте БГПУ
“Igor Serafimovich Tashlykov has passed away”- on the official website of the faculty of physics and mathematics of BSPU (in Russian) / Ушел из жизни Игорь Серафимович Ташлыков на официальном сайте физико-математического факультета БГПУ
Consolidated electronic catalogue of libraries of Belarus [Electron. resource] (in Russian) / Сводный электронный каталог библиотек Беларуси [Электрон. ресурс]
Scientific and pedagogical schools of the BSPU / editorial board. : A. V. Torkhova [et al.]; edited by A. V. Torkhova.- Minsk: BSPU, 2015. - pp. 118-136. (in Russian) / Научно-педагогические школы БГПУ / редкол. : А. В. Торхова [и др.] ; под ред. А. В. Торховой. – Минск : БГПУ , 2015. – С. 118—136.
Tashlykov Igor Serafimovich / J.G. Milyashkevich // Belarusian Encyclopedia: 18 vols. - Minsk, 2002. - Vol. 15. - P. 466. (in Belarusian) / Ташлыкоў Ігар Серафімавіч / Я. Г. Міляшкевіч // Беларуская энцыклапедыя : 18 т. — Мінск, 2002. — Т. 15. — С. 466.
Tashlykov Igor Serafimovich // Republic of Belarus: Encyclopedia: [in 7 volumes]. - Minsk, 2008. - V. 7. - P. 189-190. (in Russian) / Ташлыков Игорь Серафимович // Республика Беларусь : энциклопедия : [в 7 т.]. — Минск, 2008. — Т. 7. — С. 189—190.
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