indium sesquisulfide, diindium trisulphide
|Jmol interactive 3D||Image|
|Molar mass||325.82 g/mol|
|Density||4.90 g/cm3, solid|
|Melting point||1,050.0 °C (1,922.0 °F; 1,323.2 K)|
EU classification (DSD)
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
|what is ?)(|
Indium(III) sulfide is the inorganic compound with the formula In2S3. Three different structures ("polymorphs") are known: yellow, α-In2S3 has a defect cubic structure, red β-In2S3 has a defect spinel, tetragonal, structure, and γ-In2S3 has a layered structure. The red, β, form is considered to be the most stable form at room temperature, although the yellow form may be present depending on the method of production. Like related covalent solids, In2S3 is insoluble in all solvents. It is attacked by acids and by sulfide. It is slightly soluble in Na2S.
Indium sulfide was the first indium compound ever described, being reported in 1863. Reich and Richter determined the existence of indium as a new element from the sulfide precipitate.
Structure and properties
In2S3 features tetrahedral In(III) centers linked to four sulfido ligands. β-In2S3 is a diamagnetic, n-type semiconductor with an optical band gap of 2.1 eV. It has been proposed to replace the hazardous cadmium sulfide, CdS, as a buffer layer in solar cells.
Traditionally it was prepared in the chemical laboratory by direct combination of the elements. Production from volatile complexes of indium and sulfur for example dithiocarbamates (e.g. Et2InIIIS2CNEt2) have been explored as methods suitable for vapor deposition techniques.
- Greenwood, Norman N.; Earnshaw, Alan (1997). Chemistry of the Elements (2nd ed.). Butterworth-Heinemann. ISBN 0080379419.
- Indium Sulfide
- F. Reich, Th. Richter (1863). "Vorläufige Notiz über ein neues Metall". J. Prakt. Chem. 89: 441. doi:10.1002/prac.18630890156.
- N. Barreau, S. Marsillac, D. Albertini and J. C. Bernede (2002). "Structural, optical and electrical properties of β-In2S3-3xO3x thin films obtained by PVD". Thin Solid Films 403: 331–334. doi:10.1016/S0040-6090(01)01512-7.
- S. W. Haggata M Azad Malik, M. Motevalli, and P. O'Brien (1995). "Synthesis and Characterization of Some Mixed Alkyl Thiocarbamates of Gallium and Indium, Precursors for III/VI Materials: The X-ray Single-Crystal Structures of Dimethyl- and Diethylindium Diethyldithiocarbamate". Chem. Mater. 7 (4): 716–724. doi:10.1021/cm00052a017.
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