Indium arsenide antimonide phosphide

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Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.

InAsSbP has been widely used as blocking layers for semiconductor laser structures,[1] as well as for the mid-infrared light-emitting diodes,[citation needed] photodetectors and thermophotovoltaic cells.

InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy have been investigated by Raman spectroscopy.[2]

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References[edit]

  1. ^ Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805-809 doi:10.1007/s10812-009-9128-8
  2. ^ Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J-S. Tzeng, C-J. Wu and H-H. Lin, J. Phys. D: Appl. Phys. vol. 44 num. 8 doi:10.1088/0022-3727/44/8/085405