Indium arsenide antimonide phosphide
InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.
- Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission, L. I. Burov, A. S. Gorbatsevich, A. G. Ryabtsev, G. I. Ryabtsev, A. N. Imenkov and Yu. P. Yakovlev, Journal of Applied Spectroscopy, vol. 75 num. 6 805-809 doi:10.1007/s10812-009-9128-8
- Raman scattering in InAsxSbyP1−x−y alloys grown by gas source MBE, K. J. Cheetham, A. Krier, I. I. Patel, F. L. Martin, J-S. Tzeng, C-J. Wu and H-H. Lin, J. Phys. D: Appl. Phys. vol. 44 num. 8 doi:10.1088/0022-3727/44/8/085405
|This Condensed Matter Physics-related article is a stub. You can help Wikipedia by expanding it.|