Indium phosphide

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Indium phosphide
InPcrystal.jpg
Boron-phosphide-unit-cell-1963-CM-3D-balls.png
Names
Other names
Indium(III) phosphide
Identifiers
22398-80-7 YesY
ChemSpider 28914 YesY
Jmol interactive 3D Image
PubChem 31170
Properties
InP
Molar mass 145.792 g/mol
Appearance black cubic crystals
Density 4.81 g/cm3, solid
Melting point 1,062 °C (1,944 °F; 1,335 K)
Solubility slightly soluble in acids[1]
Band gap 1.344 eV (300 K; direct)
Electron mobility 5400 cm2/(V·s) (300 K)
Thermal conductivity 0.68 W/(cm·K) (300 K)
3.1 (infrared);
3.55 (632.8 nm)[2]
Structure
Zinc blende
a = 5.8687 Å [3]
Tetrahedral
Thermochemistry
45.4 J/(mol·K)[4]
59.8 J/(mol·K)
-88.7 kJ/mol
Hazards
Main hazards Toxic, hydrolysis to phosphine
Safety data sheet External MSDS
Related compounds
Other anions
Indium nitride
Indium arsenide
Indium antimonide
Other cations
Aluminium phosphide
Gallium phosphide
Related compounds
Indium gallium phosphide
Aluminium gallium indium phosphide
Gallium indium arsenide antimonide phosphide
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zincblende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.

Manufacturing[edit]

Indium phosphide nanocrystalline surface obtained by electrochemical etching and viewed under scanning electron microscope. Artificially colored.

Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphine.[6]

Uses[edit]

InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.[7]

It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Chemistry[edit]

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.[8]

References[edit]

  1. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 4–61, ISBN 0-8493-0594-2 
  2. ^ Sheng Chao, Tien; Lee, Chung Len; Lei, Tan Fu (1993), "The refractive index of InP and its oxide measured by multiple-angle incident ellipsometry", Journal of Materials Science Letters 12 (10): 721, doi:10.1007/BF00626698. 
  3. ^ "Basic Parameters of InP". 
  4. ^ Lide, David R. (1998), Handbook of Chemistry and Physics (87 ed.), Boca Raton, FL: CRC Press, pp. 5–20, ISBN 0-8493-0594-2 
  5. ^ Indium Phosphide at HSDB
  6. ^ InP manufacture
  7. ^ Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier. April 2005
  8. ^ Bouarissa, Nadir (July 2011). "Phonons and related crystal properties in indium phosphide under pressure". Physica B: Condensed Matter 406 (13): 2583–2587. doi:10.1016/j.physb.2011.03.073. Retrieved 22 March 2013. 

External links[edit]