Inotera

From Wikipedia, the free encyclopedia
Jump to: navigation, search
Inotera Memories, Inc.
Public
Industry Semiconductors
Founded January 2003
Headquarters Guishan, Taoyuan City, Taiwan
Products DRAM
Website http://www.inotera.com

Inotera Memories, Inc. (Traditional Chinese: 華亞科技, Hanyu Pinyin: huā yǎ kē jì), incorporated in January 2003 as a joint venture between Nanya Technology Corporation and Infineon (later Qimonda). In 2008 Micron Technology, Inc. acquired a 35.5% stake in Inotera from Qimonda. In January 2013, Micron announced an amendment to the joint development agreement with Nanya that gives Micron access to all of Inotera's manufacturing output based on market pricing.

Located in Hwa-Ya Technology Park in Guishan, Taoyuan City, Taiwan, Inotera currently has two 300mm fabrication facilities with a combined capacity of approximately 130 thousand wafer starts per month, nearly 10% of the worldwide 300mm capacity for DRAM manufacturing. Inotera provides commodity DRAM memory foundry services on 300mm silicon wafers for its customers, Micron and Nanya Technology. All of Inotera’s manufacturing capacity is reserved for these two customers on an equal basis.

The Company has reached full conversion to 70 nm shrink technology at the end of June 2008 and started pilot production of Micron’s 50 nm stack process technology from the third quarter of 2009 in order to further improve the productivity and to reduce manufacturing unit cost. Its total capacity of 130 thousand wafer starts per month is expected to be converted into 50 nm stack technology by the end of 2010 with DDR3 products making up the majority of the production.[citation needed]

Inotera’s main products are currently the 512Mb DDR, 512Mb DDR2, 1Gb DDR2 and 1Gb DDR3 products featuring high density, high speed, and low power consumption.[citation needed]

External links[edit]