International Electron Devices Meeting
The IEEE International Electron Devices Meeting (IEDM) is an annual micro- and nanoelectronics conference held each December that serves as a forum for reporting technological breakthroughs in the areas of semiconductor device technology, design, manufacturing, physics, modeling and circuit-device interaction.
The IEDM is the conference where semiconductor industry pioneer Gordon Moore first updated and explained the prediction he made 10 years earlier which has come to be known as “Moore’s Law.” Moore’s Law states that the complexity of integrated circuits would double approximately every two years. 
IEDM brings together managers, engineers, and scientists from industry and academia around the world to discuss nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nanoscale devices using emerging phenomena, optoelectronics, power, energy harvesting, and ultra-high-speed devices, as well as process technology and device modeling and simulation. The conference also encompasses discussions and presentations on devices in silicon, compound and organic semiconductors, and emerging material systems. In addition to technical paper presentations, IEDM includes multiple plenary presentations, panel sessions, tutorials, short courses, and invited talks and an entrepreneurship panel session conducted by experts in the field from around the globe.
The 2015 IEDM will take place December 7 - 9, 2015 at the Washington Hilton Hotel. It will be the IEDM's last regularly scheduled appearance in Washington, DC, where it first began in October of 1955. From 2016 onward, the IEDM will be held each December in San Francisco.
The First Annual Technical Meeting on Electron Devices (renamed the International Electron Devices Meeting in the mid-1960s) took place on October 24–25, 1955 at the Shoreham Hotel in Washington D.C. with approximately 700 scientists and engineers in attendance. At that time, the seven-year-old transistor and the electron tube reigned as the predominant electron-device technology. Fifty-four papers were presented on the then state-of-the-art in electron device technology, the majority of them from four U.S. companies -- Bell Telephone Laboratories, RCA Corporation, Hughes Aircraft Co. and Sylvania Electric Products. The need for an electron devices meeting was driven by two factors: commercial opportunities in the fast-growing new "solid-state" branch of electronics, and the U.S. government's desire for solid-state components and better microwave tubes for aerospace and defense.
The 2014 International Electron Devices Meeting took place at the Hilton San Francisco Union Square from December 15-17, 2014. The 2014 edition of the IEDM emphasized:
- 14nm FinFET transistor processes 
- power electronics 
- bio-sensors and MEMS/NEMS technologies for medical applications 
- new memory devices 
- display and sensor technologies 
- 3D device architectures 
The 2013 International Electron Devices Meeting took place at the Hilton Washington Hotel from December 9–11, 2013 and focused on:
- Non-planar FinFETs on bulk silicon and fully depleted planar silicon-on-insulator (FD-SOI) devices, as the two mainstream advanced technology approach for continued scaling 
- Non-silicon devices such as tunneling FETs (TFETs), which hold promise as a way to control transistor off-state leakage by getting around the sub-60 mV/decade steep subthreshold slope barrier. 
- 3D integrated circuit for stacking of heterogeneous chips for future system on chip (SOC)
- Various non-volatile memory technologies such as resistive memories (ReRAM or RRAM), which are attracting interest because of their potential to deliver faster write times and greater endurance than flash.
- Biomedical electronics, which are attracting widespread interest because of the potential for low-cost DNA-sequencing on a chip
- Power electronic devices for automotive and smart grid applications
IEDM 2012 Highlights
- technology/circuit co-optimization
- power/performance/area analyses
- design for manufacturing and process control
- CMOS platform technology and scaling
IEDM 2011 Highlights
- circuit & device interaction
- graphene nanoelectronics
- technology CAD for modeling & design of bio-devices
- IGBT & superjunction
IEDM 2010 Highlights
The 2010 International Electron Devices Meeting took place December 6–8, 2010 at the Hilton San Francisco Union Square hotel. Highlights from the 2010 meeting included
- emphasis on power and energy
- 15 nm CMOS device technology
- novel quantum & nano-scale devices
- mechanical MEMS
- graphene FETs
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- Purvis, Gail (15 Nov 2012). "IEDM, where the device is king". Power Systems Design. Retrieved 2013-04-25.
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- Hars, Adele (10 Dec. 2013) "IEDM'13 part 2 More SOI and Advanced Substrate Papers" Advanced Substrate News. Retrieved 2014-05-20
- Lapedus, Mark (17 Dec 2013) "Implantable TFETs; self-assembled ReRAMs; FinFETs vs. FDSOI" Semiconductor Engineering/Manufacturing Bits. Retrieved 2014-05-20
- Neale, Ron (17 Dec 2013) "Resistive Non-volatile Memory at IEDM 2013" EETimes/blog. Retrieved 2014-05-20
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- "IEDM unveils 2012 program highlights". Solid State Technology (PenWell Corporation). 17 Sep 2012. Retrieved 2013-04-25.
- James, Dick (4 Dec 2011). "IEDM 2011 Preview: Chipworks' must-see picks for IEDM". Solid State Technology (PenWell Corporation). Retrieved 2013-04-25.
- Clarke, Peter (8 Dec 2011). "IEDM compendium". EE Times (UBM Tech). Retrieved 2013-04-25.
- IEDM on Facebook
- IEDM on Twitter: @ieee_iedm
- Electron Device Society of the IEEE
- IEEE Xplore Digital Library