Johnson's figure of merit

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Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by A. Johnson of RCA in 1965.[1]

Note that this figure of merit (FoM) is applicable to both field-effect transistors (FETs), and with proper interpretation of the parameters, also to bipolar junction transistors (BJTs).

Example materials[edit]

[2]

Material Saturation velocity
x104 m/s
VBreakdown
MV/cm
JFM
Si=1.0
Notes/refs
Silicon 1.0 0.3 1.0 [2]
GaAs 1.5 0.4 2.7 [2]
SiC 2.0 3.5 20 [2]
InP 0.67 0.5 0.33 [2]
GaN 2.5 3.3 27.5 [2]

JFM figures vary wildly between sources - see external links and talk page.

External links[edit]

      Si   GaAs   GaN   SiC   diamond
JFM    1    11    790   410   5800

References[edit]

  1. ^ "Physical limitations on frequency and power parameters of transistors", RCA Review, vol. 26, pp163-177, 1965.
  2. ^ a b c d e f Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5)