Johnson's figure of merit
Johnson's figure of merit is a measure of suitability of a semiconductor material for high frequency power transistor applications and requirements. More specifically, it is the product of the charge carrier saturation velocity in the material and the electric breakdown field under same conditions, first proposed by A. Johnson of RCA in 1965.
JFM figures vary wildly between sources - see external links and talk page.
- Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5) lists JFM (relative to Si) : Si=1, GaAs=2.7, SiC=20, InP=0.33, GaN=27.5, also shows Vsat and Ebreakdown.
- Why diamond? gives very different figures (but no refs) :
Si GaAs GaN SiC diamond JFM 1 11 790 410 5800
- "Physical limitations on frequency and power parameters of transistors", RCA Review, vol. 26, pp163-177, 1965.
- Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5)
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