A lambda diode is an electronic circuit that combines a complementary pair of field-effect transistors into a two-terminal device that exhibits an area of differential negative resistance much like a tunnel diode. The term refers to the shape of the V–I curve of the device, which resembles the Greek letter λ (lambda).
Lambda diodes work at higher voltage than tunnel diodes. Whereas a typical tunnel diode may exhibit negative differential resistance approximately between 70 mV and 350 mV, this region occurs approximately between 1.5 V and 6 V in a lambda diode due to the higher pinch-off voltages of typical JFET devices. A lambda diode therefore cannot replace a tunnel diode directly.
Moreover, in a tunnel diode the current reaches a minimum of about 20% of the peak current before rising again towards higher voltages. The lambda diode current approaches zero as voltage increases, before rising quickly again at a voltage high enough to cause gate–source Zener breakdown in the FETs.
Like the tunnel diode, the negative resistance aspect of the lambda diode lends itself naturally to application in oscillator circuits and amplifiers. In addition, bistable circuits such as memory cells have been described.
- 1N3712 data sheet.
- Oscillations and Regenerative Amplification using Negative Resistance.
- A Dip Meter Using the Lambda Negative Resistance Circuit. Lloyd Butler, Amateur Radio, January 1997.
- United States Patent 4376986: Double Lambda diode memory cell; http://www.wipo.int/pctdb/images4/PCT-PAGES/1983/091983/83001335/83001335.pdf.
- Graf, Rudolf F. (1999). Modern Dictionary of Electronics, 7th ed. Boston [etc.]: Newnes Press. p. 411. ISBN 0-7506-9866-7.
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