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Resputtering involves re-emission of material, e.g., SiO2, deposited by sputtering during the deposition. Similar to sputtering, the re-emission is caused by ion bombardment of the deposited material. The resputtering technique was first published by L.I. Maissel et al. in the Journal of Applied Physics (Jan. 1965, p. 237) and was called Biased Sputtering.