Scandium nitride

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Scandium nitride
NaCl polyhedra.svg
IUPAC name
Scandium nitride
Other names
3D model (JSmol)
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EC Number
  • 247-247-2
  • InChI=1S/N.Sc
  • N#[Sc]
Molar mass 58.963
Density 4.4 g/cm3
Melting point 2,600 °C (4,710 °F; 2,870 K)
GHS labelling:
GHS07: Exclamation mark
Related compounds
Other anions
Scandium phosphide
Scandium arsenide
Scandium antimonide
Scandium bismuthide
Other cations
Yttrium nitride
Lutetium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).

Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.[1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.[1][2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.[2][3] Scandium Nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.[4]


  1. ^ a b Gu, Zheng; Edgar, J H; Pomeroy, J; Kuball, M; Coffey, D W (August 2004). "Crystal Growth and Properties of Scandium Nitride". Journal of Materials Science: Materials in Electronics. 15 (8): 555–559. doi:10.1023/B:JMSE.0000032591.54107.2c. S2CID 98462001.
  2. ^ a b Biswas, Bidesh; Saha, Bivas (2019-02-14). "Development of semiconducting ScN". Physical Review Materials. 3 (2). doi:10.1103/physrevmaterials.3.020301. ISSN 2475-9953. S2CID 139544303.
  3. ^ Zhang, Guodong; Kawamura, Fumio; Oshima, Yuichi; Villora, Encarnacion; Shimamura, Kiyoshi (4 August 2016). "Synthesis of Scandium Nitride Crystals from Indium–Scandium Melts". International Journal of Applied Ceramic Technology. 13 (6): 1134–1138. doi:10.1111/ijac.12576.
  4. ^ Yang, Hyundoek; Heo, Sungho; Lee, Dongkyu; Choi, Sangmoo; Hwang, Hyunsang (13 January 2006). "Effective Work Function of Scandium Nitride Gate Electrodes on SiO2 and HfO2". Japanese Journal of Applied Physics. 45 (2): L83–L85. doi:10.1143/JJAP.45.L83.